DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1840
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1840 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
µ
PA1840GR-9JG
FEATURES
•
High voltage rating V
DSS
= 200 V
•
Power TSSOP8 package (Single circuit)
•
Gate voltage rating
±30
V
•
Low on-state resistance
R
DS(on)
= 0.5
Ω
MAX. (V
GS
= 10 V, I
D
= 1.5 A)
•
Low input capacitance
C
iss
= 320 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
200
±30
±2.2
±8.8
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 5000 mm
2
x 1.1
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14758EJ1V0DS00 (1st edition)
Date Published November 2001 NS CP(K)
Printed in Japan
©
2000
µ
PA1840
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 160 V
V
GS
= 10 V
I
D
= 2.2 A
I
F
= 2.2 A, V
GS
= 0 V
I
F
= 2.2 A, V
GS
= 0 V
di/dt = 50 A/
µ
s
TEST CONDITIONS
V
DS
= 200 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 1.5 A
V
GS
= 10 V, I
D
= 1.5 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 100 V, I
D
= 1.5 A
V
GS
= 10 V
R
G
= 10
Ω
2.5
1.0
2.0
0.37
320
96
55
14
13
30
13
16
2.3
9.0
1.0
150
0.4
0.5
MIN.
TYP.
MAX.
100
±10
4.5
UNIT
µ
A
µ
A
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
V
DD
I
D
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
V
GS
V
GS
Wave Form
I
G
= 2 mA
V
GS
90%
R
L
V
DD
0
10%
PG.
90%
90%
50
Ω
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G14758EJ1V0DS
µ
PA1840
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
I
D
- Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
100
dT - Derating Factor - %
10
I
D(pulse)
d
ite
im V)
0
)
L
on
=1
S(
R
D
V
GS
I
D(DC)
@
(
PW
10
10
0m
s
DC
ms
60
=1
ms
1
Po
we
rD
isp
40
20
0.1
ira
tio
nL
0
0.01
30
60
120
90
T
A
- Ambient Temperature -
˚C
150
T
A
= 25˚C
Single Pulse
Mounted on Ceramic
2
Substrate of 5000 mm x 1.1mm
im
ite
d
1
10
100
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
TRANSFER CHARACTERISTICS
10
V
DS
= 10 V
Pulsed
Pulsed
1
I
D
- Drain Current - A
I
D
- Drain Current - A
8
V
GS
= 10 V
6
T
A
=
−25˚C
25˚C
75˚C
0.1
125˚C
0.01
0.001
0.0001
4
2
0
0.0
1.0
2.0
3.0
4.0
5.0
0
1
2
V
DS
- Drain to Source Voltage - V
4
5
6
7
8
9
V
GS
- Gate to Sorce Voltage - V
3
10
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
V
GS(off)
- Gate to Source Cut-off Voltage - V
4.5
V
DS
= 10 V
I
D
= 1 mA
10
V
DS
= 10 V
Pulsed
4.0
1
T
A
=
−25
˚C
25˚C
75˚C
125˚C
3.5
3.0
0.1
2.5
−50
0
50
100
150
0.01
0.01
0.1
1
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
10
Data Sheet G14758EJ1V0DS
3
µ
PA1840
R
DS(on)
- Drain to Source On-state Resistance -
Ω
1.0
R
DS (on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.0
I
D
= 1.5 A
V
GS
= 10 V
Pulsed
0.8
T
A
= 125
˚C
0.8
0.6
75
˚C
0.4
25
˚C
−25
˚C
0.6
V
GS
= 10 V
0.4
0.2
0.2
0
−50
0
0.01
0.1
1
I
D
- Drain Current - A
10
0
50
100
150
Tch - Channel Temperature -
˚C
R
DS (on)
- Drain to Source On-state Resistance -
Ω
C
iss
, C
oss
, C
rss
- Capacitance - pF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.0
I
D
= 1.5 A
Pulsed
0.8
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
f = 1 MHz
V
GS
= 0 V
1000
C
iss
100
C
oss
10
C
rss
0.6
0.4
0.2
0
0
10
20
1
0.1
1
10
100
1000
V
DS
- Drain Source Voltage - V
V
GS
- Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
td
(on)
, tr, td
(off)
, tf - Switching Time - ns
100
tf
td
(off)
td
(on)
tr
10
V
DD
= 100 V
V
GS
= 10 V
R
G
= 10
Ω
1
0.1
1
I
D
- Drain Current - A
10
4
Data Sheet G14758EJ1V0DS
µ
PA1840
V
DS
- Drain to Source Voltage - V
140
120
100
80
60
40
20
0
2
V
DD
= 160 V
100 V
40 V
14
12
10
8
V
GS
1
0.1
6
4
V
DS
2
10
12 14
15
16 18
20
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
45 6
8
V
F(S-D)
- Source to Drain Voltage - V
Q
g
- Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance - ˚C/W
Mounted on ceramic
Substrate of 5000 mm
2
x 1.1 mm
Single Pulse
100
62.5
˚C/W
10
1
0.1
0.001
0.01
0.1
1
PW - Pulse Width - s
10
100
1000
V
GS
- Gate to Source Voltage - V
I
F
- Source to Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
V
GS
= 0 V
Pulsed
DYNAMIC INPUT CHARACTERISTICS
180
160
I
D
= 2.2 A
V
GS
= 10 V
18
16
Data Sheet G14758EJ1V0DS
5
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