DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1830
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1830 is a switching device which can be
driven directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power management of notebook
computers and so on.
8
PACKAGE DRAWING (Unit: mm)
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0±0.05
0.25
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
•
4.0 V drive available
•
Low on-state resistance
R
DS(on)1
= 17 mΩ MAX. (V
GS
=
−10
V, I
D
=
−4.5
A)
R
DS(on)2
= 24.5 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−4.5
A)
R
DS(on)3
= 28 mΩ MAX. (V
GS
=
−4.0
V, I
D
=
−4.5
A)
•
Built-in G-S protection diode against ESD
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.65
0.8 MAX.
0.1
µ
PA1830GR-9JG
Power TSSOP8
0.27
+0.03
–0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−30
m20
m9.0
m36
2.0
150
−55
to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Channel Temperature
Storage Temperature
Gate
Gate
Protection
Diode
Body
Diode
Source
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16268EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
©
2002
µ
PA1830
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
−
24 V
V
GS
=
−
10 V
I
D
=
−
9.0 A
I
F
= 9.0 A, V
GS
= 0 V
I
F
= 9.0 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
=
−
30 V, V
GS
= 0 V
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
−
10 V, I
D
=
−
1.0 mA
V
DS
=
−
10 V, I
D
=
−
4.5 A
V
GS
=
−
10 V, I
D
=
−
4.5 A
V
GS
=
−
4.5 V, I
D
=
−
4.5 A
V
GS
=
−
4.0 V, I
D
=
−
4.5 A
V
DS
=
−
10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
=
−
15 V, I
D
=
−
4.5 A
V
GS
=
−
10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
UNIT
−
1.0
m
10
−
1.0
8.0
−2.0
17.4
13.7
18.5
21
1950
570
350
17
16
140
150
38
4.5
12
0.84
60
40
17
24.5
28
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
−
2.5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
V
GS(−)
0
10%
V
GS
90%
I
G
=
−2
mA
50
Ω
R
L
V
DD
V
DD
PG.
90%
V
DS(−)
90%
10%
10%
V
GS(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G16268EJ1V0DS
µ
PA1830
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
2.5
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - W
100
2
80
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
Mounted on FR-4 board
2
of 2500 mm x 1.6 mm
1.5
60
1
40
20
0.5
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
- 100
I
D(pulse)
I
D
- Drain Current - A
- 10
I
D(DC)
PW = 1 ms
-1
R
DS(on)
Limited
(V
GS
=
−10
V)
10 ms
100 ms
- 0.1
Single pulse
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
- 0.01
- 0.1
-1
- 10
- 100
DC
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
Single pulse
Mounted on FR-4 board
2
of 2500 mm x 1.6 mm
125°C/W
100
10
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
62.5°C/W
1
0.1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16268EJ1V0DS
3
µ
PA1830
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 40
Pulsed
V
GS
=
−10
V
−4.5
V
FORWARD TRANSFER CHARACTERISTICS
- 100
V
DS
=
−10
V
Pulsed
- 10
I
D
- Drain Current - A
- 30
−4.0
V
I
D
- Drain Current - A
-1
- 20
- 0.1
T
A
= 125°C
75°C
25°C
−25°C
- 0.01
- 10
- 0.001
0
0
- 0.2
- 0.4
- 0.6
- 0.8
-1
- 0.0001
-1
- 1.5
-2
- 2.5
-3
- 3.5
-4
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
- 2.4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
=
−10
V
Pulsed
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
=
−10
V
I
D
=
−1.0
mA
- 2.2
10
-2
T
A
=
−25°C
25°C
75°C
125°C
- 1.8
1
- 1.6
- 1.4
-50
0
50
100
150
0.1
- 0.01
- 0.1
-1
- 10
- 100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
I
D
=
−4.5
A
Pulsed
30
V
GS
=
−4.0
V
−4.5
V
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
Pulsed
30
20
I
D
=
−4.5
A
10
10
−10
V
0
-50
0
50
100
150
0
0
-5
- 10
- 15
- 20
T
ch
- Channel Temperature - °C
V
GS
- Gate to Source Voltage - V
4
Data Sheet G16268EJ1V0DS
µ
PA1830
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
V
GS
=
−10
V
Pulsed
30
T
A
= 125°C
75°C
25°C
−25°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
V
GS
=
−4.5
V
Pulsed
30
T
A
= 125°C
75°C
25°C
−25°C
20
20
10
10
0
- 0.01
- 0.1
-1
- 10
- 100
0
- 0.01
- 0.1
-1
- 10
- 100
I
D
- Drain Current - A
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
30
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
=
−4.0
V
Pulsed
T
A
= 125°C
75°C
25°C
−25°C
V
GS
= 0 V
f = 1.0 MHz
C
iss
1000
20
10
C
oss
C
rss
0
- 0.01
- 0.1
-1
- 10
- 100
100
- 0.1
-1
- 10
- 100
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
10000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1000
t
f
I
F
- Diode Forward Current - A
V
DD
=
−15
V
V
GS
=
−10
V
R
G
= 10
Ω
10
V
GS
= 0 V
1
t
d(off)
100
t
d(on)
10
t
r
0.1
1
- 0.01
0.01
- 0.1
-1
- 10
0.4
0.6
0.8
1
1.2
I
D
- Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
Data Sheet G16268EJ1V0DS
5
NXP MCU
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