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UPA1830GR-9JG

Description
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size67KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1830GR-9JG Overview

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1830
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1830 is a switching device which can be
driven directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power management of notebook
computers and so on.
8
PACKAGE DRAWING (Unit: mm)
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0±0.05
0.25
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
4.0 V drive available
Low on-state resistance
R
DS(on)1
= 17 mΩ MAX. (V
GS
=
−10
V, I
D
=
−4.5
A)
R
DS(on)2
= 24.5 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−4.5
A)
R
DS(on)3
= 28 mΩ MAX. (V
GS
=
−4.0
V, I
D
=
−4.5
A)
Built-in G-S protection diode against ESD
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.65
0.8 MAX.
0.1
µ
PA1830GR-9JG
Power TSSOP8
0.27
+0.03
–0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−30
m20
m9.0
m36
2.0
150
−55
to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Channel Temperature
Storage Temperature
Gate
Gate
Protection
Diode
Body
Diode
Source
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16268EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
©
2002

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