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SAP16NO

Description
Power Bipolar Transistor, 15A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin
CategoryDiscrete semiconductor    The transistor   
File Size36KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric Compare View All

SAP16NO Overview

Power Bipolar Transistor, 15A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin

SAP16NO Parametric

Parameter NameAttribute value
MakerSANKEN
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)15 A
Collector-emitter maximum voltage160 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)5000
JESD-30 codeR-PSFM-T5
Number of components1
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
SAP16N
(Complement to type SAP16P)
Equivalent
circuit
B
R: 100Ω Typ.
C
D
S
Emitter resistor
RE: 0.22Ω Typ.
E
Application:
Audio
sElectrical
Characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
V
CE (sat)
V
BE (sat)
V
BE
Di V
F
R
E
R
EB
Conditions
V
CB
=160V
V
EB
= 5V
I
C
= 30mA
V
CE
= 4V, I
C
= 10A
I
C
= 10A, I
B
= 10mA
I
C
= 10A, I
B
= 10mA
V
CE
= 20V, I
C
= 40mA
I
F
= 2.5mA
I
E
= 1A
0.176
90
1190
705
0.22
100
0.264
110
160
5000
20000
2.0
2.5
V
V
mV
mV
Ratings
min
typ
max
sAbsolute
maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Di I
F
Tj
Tstg
Ratings
160
160
5
15
1
150( Tc = 25°C)
10
150
–40 to +150
Unit
V
V
V
A
A
W
mA
°C
°C
( Ta = 25°C )
Unit
µA
µA
V
External Dimensions
3.3
±
0.2
15.4
±
0.3
9.9
±
0.2
φ
3.2
±
0.2
5
±
0.2
(Unit: mm)
4.5
±
0.2
1.6
±
0.2
100
100
3.4max
a
b
1
±
0.1
(41)
(2.5)
0.65
–0.1
+0.2
0.8
–0.1
+0.2
2.54
±
0.1
3.81
±
0.1
(7.62)
(12.7)
17.8
±
0.3
4
±
0.1
2.54
±
0.1
3.81
±
0.1
(18)
1.35
–0.1
+0.2
0.65
–0.1
V
h
FE
Rank O (5000 to 12000), Y (8000 to 20000)
B D
C
S E
Weight: Approx 8.3g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
50mA
5.0mA
3.0mA
V
CE(
sat
)
– I
B
Characteristics
(Typical)
Collector-Emitter Saturation Voltage V
CE(
sat
)
(V)
3
15
I
C
– V
BE
Temperature Characteristics
(Typical)
( V
CE
= 4V)
15
0m
2.
A
A
1.5m
1.2mA
1.0mA
Collector Current I
C
(A)
10
0.8mA
2
Collector Current I
C
(A)
10
I
C
=15A
10A
1
5A
0.5mA
5
I
B
= 0.3mA
5
125°C
25°C
–30°C
0
0
2
4
6
0
0.4
1
5
10
50
100
200
0
0
1
2
2
±
0.1
+0.2
(36°)
7
±
0.2
22
±
0.3
23
±
0.3
28
±
0.3
2.5
Collector-Emitter Voltage V
CE
( V)
Base Current I
B
(mA)
Base-Emitter Voltage V
BE
(V)
h
FE
– I
C
Characteristics
(Typical)
DC Current Gain h
FE
j-a
(°C/W)
j-a
t
3
Characteristics
40000
(V
CE
=4V)
125°C
10000
5000
25°C
–30°C
Transient Thermal Resistance
1
0.5
1000
0.3
0.1
1
5
10
50
100
500 1000 2000
0.5
1
5
10
15
Collector Current I
C
(A)
Time t (ms)
Safe Operating Area
(Single Pulse)
40
10
m
s
Di I
F
– V
F
Characteristics
(Typical)
10
150
P
C
– Ta Derating
Collector Current I
C
(A)
D.
C
Forward Current I
F
(mA)
10
5
10
0
m
s
Maximum Power Dissipation Pc (W)
W
5
ith
100
In
fin
ite
he
at
sin
k
1
0.5
50
Without Heatsink
Natural Cooling
0.1
0.05
3
5
10
50
100
200
1
0
0.5
1.0
1.5
2.0
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Collector-Emitter Voltage V
CE
(V)
Forward Voltage V
F
(V )
Ambient Temperature Ta (°C)
169

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Description Power Bipolar Transistor, 15A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin Power Bipolar Transistor, 15A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 15 A 15 A
Collector-emitter maximum voltage 160 V 160 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 5000 8000
JESD-30 code R-PSFM-T5 R-PSFM-T5
Number of components 1 1
Number of terminals 5 5
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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