DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1816
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1816 is a switching device which can be
driven directly by a 1.8 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power management of notebook
computers and so on.
8
PACKAGE DRAWING (Unit: mm)
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0 ±0.05
0.25
3°
+5°
–3°
0.1 ±0.05
0.5
0.6
+0.15
–0.1
FEATURES
•
1.8 V drive available
•
Low on-state resistance
R
DS(on)1
= 15 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−4.5
A)
R
DS(on)2
= 16 mΩ MAX. (V
GS
=
−4.0
V, I
D
=
−4.5
A)
R
DS(on)3
= 22.5 mΩ MAX. (V
GS
=
−2.5
V, I
D
=
−4.5
A)
R
DS(on)4
= 41.5 mΩ MAX. (V
GS
=
−1.8
V, I
D
=
−2.5
A)
•
Built-in G-S protection diode against ESD
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
0.8 MAX.
µ
PA1816GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−12
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
m
8.0
m
9.0
m
36
2.0
150
−55
to +150
Total Power Dissipation
Channel Temperature
Storage Temperature
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G16252EJ1V0DS00 (1st edition)
Date Published July 2002 NS CP(K)
Printed in Japan
©
2002
µ
PA1816
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
R
DS(on)4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
−
10 V
V
GS
=
−
4.0 V
I
D
=
−
9.0 A
I
F
= 9.0 A, V
GS
= 0 V
I
F
= 9.0 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
=
−
12 V, V
GS
= 0 V
V
GS
=
MIN.
TYP.
MAX.
UNIT
−
1.0
µ
A
µ
A
V
S
m
8.0 V, V
DS
= 0 V
−
0.45
−
0.75
11
22
12.0
12.5
16.2
23.7
1570
400
240
16
132
223
295
15
3.0
4.5
0.82
490
580
m
10
−
1.5
V
DS
=
−
10 V, I
D
=
−
1.0 mA
V
DS
=
−
10 V, I
D
=
−
4.5 A
V
GS
=
−
4.5 V, I
D
=
−
4.5 A
V
GS
=
−
4.0 V, I
D
=
−
4.5 A
V
GS
=
−
2.5 V, I
D
=
−
4.5 A
V
GS
=
−
1.8 V, I
D
=
−
2.5 A
V
DS
=
−
10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
=
−
10 V, I
D
=
−
4.5 A
V
GS
=
−
4.0 V
R
G
= 10
Ω
15
16
22.5
41.5
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
V
GS (−)
D.U.T.
R
L
PG.
R
G
V
DD
V
DS
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
I
G
=
−2
mA
50
Ω
R
L
V
DD
V
GS
Wave Form
0
10%
V
GS
90%
V
DS (−)
90%
90%
10%
10%
PG.
V
DS
V
GS (−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G16252EJ1V0DS
µ
PA1816
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
P
T
- Total Power Dissipation - W
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
2
1.5
1
0.5
Mounted on ceramic
substrate of
2
5000 mm x 1.1 mm
0
25
50
75
100
125
150
175
0
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
T
A
- Ambient Temperature -
°C
-100
I
D(pulse)
I
D
- Drain Current - A
-10
I
D(DC)
PW = 1 ms
10 ms
-1
R
DS(on)
Limited
(V
GS
=
−4.5
V)
100 ms
DC
-0.1
Single Pulse
Mounted on ceramic
substrate of
2
5000 mm x 1.1 mm
-1
-10
-100
-0.01
-0.1
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
100
62.5°C/W
10
Single Pulse
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16252EJ1V0DS
3
µ
PA1816
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-40
Pulsed
I
D
- Drain Current - A
-100
−4.0
V
I
D
- Drain Current - A
-30
V
GS
=
−4.5
V
−2.5
V
-10
-1
-0.1
-0.01
-0.001
V
D S
=
−10
V
Pulsed
-20
−1.8
V
-10
T
A
= 125°C
75°C
25°C
−25°C
0
0
-0.2
-0.4
-0.6
-0.8
-1
V
DS
- Drain to Source Voltage - V
-0.0001
0
-0.5
-1
-1.5
-2
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
-1
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
=
−10
V
I
D
=
−1.0
mA
100
V
DS
=
−10
V
Pulsed
-0.8
10
T
A
=
−25°C
25°C
75°C
125°C
-0.6
1
-0.4
-50
0
50
100
150
T
ch
- Channel Temperature -
°C
0.1
-0.01
-0.1
-1
-10
-100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
V
GS
=
−1.8
V, I
D
=
−1.5
A
30
V
GS
=
−2.5
V, I
D
=
−4.5
A
40
Pulsed
30
20
20
I
D
=
−4.5
A
10
10
V
GS
=
−4.0
V, I
D
=
−4.5
A
V
GS
=
−4.5
V, I
D
=
−4.5
A
0
-50
0
50
100
150
T
ch
- Channel Temperature -
°C
0
0
-2
-4
-6
-8
V
GS
- Gate to Source Voltage - V
4
Data Sheet G16252EJ1V0DS
µ
PA1816
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
V
GS
=
−4.5
V
Pulsed
T
A
= 125°C
20
V
GS
=
−4.0
V
Pulsed
T
A
= 125°C
15
75°C
25°C
15
75°C
25°C
−25°C
10
−25°C
10
5
-0.01
-0.1
-1
-10
-100
5
-0.01
-0.1
-1
-10
-100
I
D
- Drain Current - A
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
V
GS
=
−2.5
V
Pulsed
T
A
= 125°C
75°C
25°C
−25°C
40
V
GS
=
−1.8
V
Pulsed
30
30
20
20
T
A
= 125°C
75°C
25°C
−25°C
10
10
0
-0.01
-0.1
-1
-10
-100
0
-0.01
-0.1
-1
-10
-100
I
D
- Drain Current - A
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
V
GS
= 0 V
f = 1.0 MHz
1000
t
f
t
d(off)
V
DD
=
−10
V
V
GS
=
−4.0
V
R
G
= 10
Ω
C
iss
1000
100
t
d(on)
10
t
r
C
oss
C
rss
100
-0.1
-1
-10
-100
1
-0.01
-0.1
-1
-10
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
Data Sheet G16252EJ1V0DS
5
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