UPA1810GR-9JG datasheet, PDF - EEWORLD Datasheet

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UPA1810GR-9JG: DescriptionP-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING; File Size56KB，8 Pages; ManufacturerNEC ( Renesas ); Websitehttps://www2.renesas.cn/zh-cn/

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1810

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The

PA1810 is a switching device which can be

driven directly by a 2.5 V power source.

The

PA1810 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

PACKAGE DRAWING (Unit : mm)

1, 5, 8 : Drain

2, 3, 6, 7: Source

: Gate

1.2 MAX.

1.0±0.05

0.25

3°

+5°

–3°

0.1±0.05

0.5

0.6

+0.15

–0.1

FEATURES

•

Can be driven by a 2.5 V power source

•

Low on-state resistance

DS(on)1

= 55 mΩ MAX. (V

= –4.5 V, I

= –2.0 A)

DS(on)2

= 60 mΩ MAX. (V

= –4.0 V, I

= –2.0 A)

DS(on)3

= 100 mΩ MAX. (V

= –2.5 V, I

= –2.0 A)

0.145 ±0.055

3.15 ±0.15

3.0 ±0.1

6.4 ±0.2

4.4 ±0.1

1.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

Power TSSOP8

0.65

0.27

+0.03

–0.08

PA1810GR-9JG

0.8 MAX.

0.10 M

0.1

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Note1

Note2

EQUIVALENT CIRCUIT

–12

−10/+5

±4.0

±16

2.0

150

–55 to +150

°C

Gate

Protection

Diode

Source

Gate

Drain

DSS

GSS

D(DC)

D(pulse)

stg

Body

Diode

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1.

≤

s, Duty Cycle

≤

1 %

Mounted on ceramic substrate of 5000 mm x 1.1 mm

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

D11819EJ1V0DS00 (1st edition)

Date Published June 1999 NS CP(K)

Printed in Japan

1996, 1999

UPA1810GR-9JG Related Products

	UPA1810GR-9JG	UPA1810
Description	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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