UPD4632312F9-CE10X-BT3 datasheet, PDF

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UPD4632312F9-CE10X-BT3: DescriptionStandard SRAM, 2MX16, 105ns, CMOS, PBGA77, 12 X 7 MM, TAPE, FBGA-77; Categorystorage storage; File Size336KB，48 Pages; ManufacturerNEC Electronics

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UPD4632312F9-CE10X-BT3 Overview

Standard SRAM, 2MX16, 105ns, CMOS, PBGA77, 12 X 7 MM, TAPE, FBGA-77

UPD4632312F9-CE10X-BT3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	NEC Electronics
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	77
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	105 ns
JESD-30 code	R-PBGA-B77
JESD-609 code	e0
length	12 mm
memory density	33554432 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	77
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	TIN LEAD
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7 mm

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD4632312-X

32M-BIT CMOS MOBILE SPECIFIED RAM

2M-WORD BY 16-BIT

EXTENDED TEMPERATURE OPERATION

Description

The

PD4632312-X is a high speed, low power, 33,554,432 bits (2,097,152 words by 16 bits) CMOS mobile

specified RAM featuring low power static RAM compatible function and pin configuration.

The

PD4632312-X is fabricated with advanced CMOS technology using one-transistor memory cell.

The

PD4632312-X is packed in 77-pin TAPE FBGA.

Features

•

2,097,152 words by 16 bits organization

•

Fast access time: 85, 95, 105 ns (MAX.)

•

Fast page access time: 35, 40, 45 ns (MAX.)

•

Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15)

•

Low voltage operation

(B version: V

= 2.6 to 3.1 V,

C version: V

= 2.3 to 2.7 V,

BE version: V

= 2.6 to 3.1 V (Chip), V

Q = 1.65 to 1.95 V (I/O),

CE version: V

= 2.3 to 2.7 V (Chip), V

Q = 1.65 to 1.95 V (I/O))

•

Operating ambient temperature: T

= –25 to +85 °C

•

Output Enable input for easy application

•

Chip Enable input: /CS pin

•

Standby Mode input: MODE pin

•

Standby Mode1: Normal standby (Memory cell data hold valid)

•

Standby Mode2: Density of memory cell data hold is variable

Product name

Access

time

ns (MAX.)

Chip

Operating

supply voltage

I/O

–

Operating

ambient

At operating

Supply current

At standby

A (MAX.)

Density of data hold

32M bits 16M bits 8M bits 4M bits

100

0M bit

temperature mA (MAX.)

°C

–25 to +85

PD4632312-BxxX

PD4632312-CxxX

PD4632312-BExxX

PD4632312-CExxX

Note

105

2.7 to 3.1

2.6 to 3.1

2.3 to 2.7

2.6 to 3.1 1.65 to 1.95

2.3 to 2.7

Note

Under Development

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M15406EJ7V0DS00 (7th edition)

Date Published March 2002 NS CP (K)

Printed in Japan

The mark

shows major revised points.

2001

UPD4632312F9-CE10X-BT3 Related Products

	UPD4632312F9-CE10X-BT3	UPD4632312F9-C95X-BT3
Description	Standard SRAM, 2MX16, 105ns, CMOS, PBGA77, 12 X 7 MM, TAPE, FBGA-77	Standard SRAM, 2MX16, 95ns, CMOS, PBGA77, 12 X 7 MM, TAPE, FBGA-77
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	NEC Electronics	NEC Electronics
Parts packaging code	BGA	BGA
package instruction	TFBGA,	TFBGA,
Contacts	77	77
Reach Compliance Code	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A
Maximum access time	105 ns	95 ns
JESD-30 code	R-PBGA-B77	R-PBGA-B77
JESD-609 code	e0	e0
length	12 mm	12 mm
memory density	33554432 bit	33554432 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM
memory width	16	16
Number of functions	1	1
Number of terminals	77	77
word count	2097152 words	2097152 words
character code	2000000	2000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C
Minimum operating temperature	-25 °C	-25 °C
organize	2MX16	2MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA
Package shape	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	OTHER	OTHER
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
width	7 mm	7 mm

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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