DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1731
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The
µ
PA1731 is P-Channel MOS Field Effect Transistor
designed for power management applications of
notebook computers and Li-ion battery protection circuit.
8
PACKAGE DRAWING (Unit : mm)
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
•
Low on-resistance
1.44
R
DS(on)1
= 10.3 mΩ TYP. (V
GS
= –10 V, I
D
= –5.0 A)
1.8 MAX.
1
5.37 MAX.
4
6.0 ±0.3
4.4
+0.10
–0.05
0.8
R
DS(on)2
= 14.6 mΩ TYP. (V
GS
= –4.5 V, I
D
= –5.0 A)
0.05 MIN.
•
•
•
Low C
iss
: C
iss
=2600 pF TYP.
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
0.15
R
DS(on)3
= 16.5 mΩ TYP. (V
GS
= –4.0 V, I
D
= –5.0 A)
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1731G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–30
#
20
#
10
#
40
V
V
A
A
W
°C
°C
Gate
Gate
Protection
Diode
Body
Diode
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
2.0
150
–55 to + 150
2
Source
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14285EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1999
µ
PA1731
•
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
=
–
10 V, I
D
=
–
5.0 A
V
GS
=
–
4.5 V, I
D
=
–
5.0 A
V
GS
=
–
4.0 V, I
D
=
–
5.0 A
V
DS
=
–
10 V, I
D
=
–
1 mA
V
DS
=
–
10 V, I
D
=
–
5.0 A
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
#
20 V, V
DS
= 0 V
V
DS
=
–
10 V
V
GS
= 0 V
f = 1 MHz
I
D
=
–
5.0 A
V
GS(on)
=
–
10 V
V
DD
=
–
15 V
R
G
= 10
Ω
I
D
=
–
10 A
V
DD
=
–
24 V
V
GS
=
–
10 V
I
F
= 10 A, V
GS
= 0 V
I
F
= 10 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
2600
810
350
32
185
155
110
46
6.5
12
0.80
50
46
MIN.
TYP.
10.3
14.6
16.5
MAX.
13.0
19.5
22.0
UNIT
mΩ
mΩ
mΩ
V
S
–
1.0
8.0
–
1.6
18.0
–
2.5
–
1
#
10
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
V
GS
V
GS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
I
G
= 2 mA
10 %
90 %
90 %
I
D
V
GS (on)
90 %
R
L
V
DD
PG.
R
G
R
G
= 10
Ω
0
I
D
V
DD
PG.
50
Ω
V
GS
0
τ
τ
=
1
µ
s
Duty Cycle
≤
1
%
D
Wave Form
I
0
10 %
t
d (on)
t
on
t
r
t
d (off)
t
off
10 %
t
f
2
Data Sheet G14285EJ1V0DS00
µ
PA1731
•
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
2.4
2.0
1.6
1.2
0.8
0.4
0
20
40
60
Mounted on ceramic
substrate of
1200 mm
2
x 2.2 mm
0
20
40
60
80
100 120 140 160
80
100 120 140 160
T
A
- Ambient Temperature - ˚C
T
A
- Ambient Temperature - ˚C
−1000
−100
−10
−1
−0.1
FORWARD BIAS SAFE OPERATING AREA
Remark
Mounted on ceramic substrate of
I
D(pulse)
=40 A
I
D
- Drain Current - A
1m
I
D
(DC)=10 A
100
µ
s
1200 mm x 2.2 mm
2
10
10
Dis
s
ipa
s
ms
s
Po
we
r
0m
tion
Lim
ited
−0.01
−0.1
T
A
= 25 ˚C
Single Pulse
−1
−10
−100
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 62.5˚C
10
1
0.1
0.01
Mounted on ceramic
substrate of 1200 mm
2
x 2.2 mm
Single Pulse
0.001
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G14285EJ1V0DS00
3
µ
PA1731
FORWARD TRANSFER CHARACTERISTICS
−100
Pulsed
−10
T
A
=
−50˚C
−25˚C
25˚C
75˚C
125˚C
150˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−50
−40
−30
−20
−10
V
GS
=
−10
V
Pulsed
−4.5
V
−4.0
V
−1
−0.1
−0.01
−0.001
−0.0001
0
−1.0
−2.0
V
DS
=
−10
V
−3.0
−4.0
I
D
- Drain Current - A
I
D
- Drain Current - A
0
−0.2
−0.4
−0.6
−0.8
V
GS
-
Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
|y
fs
| - Forward Transfer Admittance - S
100
T
A
=
−50˚C
−25˚C
25˚C
75˚C
125˚C
150˚C
10
R
DS(on)
- Drain to Source On-State Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
20
I
D
=
−10
A
−5.0
A
10
1
V
DS
=
−10
V
Pulsed
−0.1
−1
−10
−100
0
−5
−10
−15
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
Pulsed
15
V
GS
=
−4.0
V
−4.5
V
−10
V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
−2.0
V
DS
=
−10
V
I
D
=
−1
mA
−1.5
10
−1.0
5
−0.5
0
−0.1
−1
−10
−100
−100
0
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet G14285EJ1V0DS00
µ
PA1731
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
20
15
10
5
I
D
=
−5.0
A
0
−50
0
50
100
150
V
GS
=
−4.0
V
−4.5
V
−10
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
I
F
- Diode Forward Current - A
10
V
GS
=
−4.5
V
0V
1
0.1
0.01
0.001
0
0.5
1.0
1.5
V
F
- Source to Drain Voltage - V
T
ch
- Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
−1
0000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1 000
SWITCHING CHARACTERISTICS
t
r
t
d(off)
100
t
f
t
d(on)
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
−1
000
C
oss
C
rss
−100
10
V
DS
=
−15
V
V
GS
=
−10
V
R
G
= 10Ω
−10
−100
−10
−0.1
V
GS
= 0 V
f = 1 MHz
−1
−10
−100
1
−0.1
−1
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE CURRENT
10000
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
1000
−30
V
DS
=
−24
V
−15
V
−6
V
V
GS
−10
−8
−6
−4
−2
100
−20
10
−10
V
DS
0
10
20
30
40
1
−0.1
−1
−10
−100
50
0
I
F
- Diode Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
−14
I
D
=
−10
A
−12
Data Sheet G14285EJ1V0DS00
5
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