DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1724
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
5
DESCRIPTION
The
µ
PA1724 is N-Channel MOS Field Effect
Transistor designed for power management
applications of notebook computers and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
•
2.5-V gate drive and low on-resistance
R
DS(on)1
= 11.0 mΩ MAX. (V
GS
= 4.5 V, I
D
= 5.0 A)
1.44
5
1
5.37 MAX.
4
6.0 ±0.3
4.4
+0.10
–0.05
R
DS(on)2
= 12.0 mΩ MAX. (V
GS
= 4.0 V, I
D
= 5.0 A)
•
Low C
iss
: C
iss
= 1850 pF TYP.
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
1.8 MAX.
0.8
R
DS(on)3
= 15.0 mΩ MAX. (V
GS
= 2.5 V, I
D
= 5.0 A)
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1724G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
20
±12
±10
±40
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14048EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999, 2000
µ
PA1724
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 4.5 V, I
D
= 5.0 A
V
GS
= 4.0 V, I
D
= 5.0 A
V
GS
= 2.5 V, I
D
= 5.0 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 5.0 A
V
DS
= 20 V, V
GS
= 0 V
V
GS
= ±12 V, V
DS
= 0 V
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 5.0 A
V
GS(on)
= 4.5 V
V
DD
= 10 V
R
G
= 10
Ω
I
D
= 10 A
V
DD
= 16 V
V
GS
= 4.5 V
I
F
= 10 A, V
GS
= 0 V
I
F
= 10 A, V
GS
= 0 V
di/dt = 100 A /
µ
s
1850
610
320
43
170
90
130
18
3.2
7.8
0.78
45
40
0.5
10.0
MIN.
TYP.
8.6
8.8
11.0
0.84
19
10
±10
MAX.
11.0
12.0
15.0
1.5
UNIT
mΩ
mΩ
mΩ
V
S
5
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
5
5
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet G14048EJ1V0DS00
µ
PA1724
5
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
50
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
I
D
- Drain Current - A
10
I
D
- Drain Current - A
1
T
A
= 125˚C
75˚C
25˚C
-25˚C
40
30
V
GS
= 4.5 V
0.1
V
GS
= 2.5 V
20
10
V
GS
= 4.0 V
0.01
0.001
V
DS
= 10 V
0
1
2
3
V
GS
-
Gate to Source Voltage - V
0
0.0
0.2
0.4
0.6
0.8
1.0
V
DS
- Drain to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30.0
25.0
20.0
15.0
V
GS
= 2.5 V
10.0
5.0
0.0
−
50
−
25
I
D
= 5.0 A
0
25
50
75
100 125 150
T
ch
- Channel Temperature - ˚C
V
GS
= 4.5 V
Pulsed
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
20
10
I
D
= 5.0 A
I
D
= 2.0 A
0
0
5
10
15
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
Pulsed
30
V
GS(off)
- Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2
V
DS
= 10 V
I
D
= 1 mA
1.5
20
V
GS
= 2.5 V
10
V
GS
= 4.0 V
V
GS
= 4.5 V
0
0.1
1
10
100
1
0.5
0
−
50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
Data Sheet G14048EJ1V0DS00
3
µ
PA1724
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1 000
Pulsed
V
DS
=10 V
Pulsed
I
F
- Diode Forward Current - A
10
100
V
GS
= 4.0 V
10
V
GS
= 0 V
T
A
= -25˚C
T
A
= 25˚C
T
A
= 75˚C
T
A
= 125˚C
1
1
0.1
0.01
0.1
1
10
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10 000
V
SD
- Source to Drain Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
C
iss
1 000
C
oss
C
rss
100
10
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
25
20
15
10
5
0
V
DS
0
10
20
30
40
50
V
GS
V
DD
= 16 V
10 V
4V
10
8
6
4
2
0
60
100
10
1
0.1
1
10
100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
4
Data Sheet G14048EJ1V0DS00
V
GS
- Gate to Source Voltage - V
di/dt = 100A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
12
30
I
D
= 10 A
µ
PA1724
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
2.8
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
2.4
2.0
1.6
1.2
0.8
0.4
0
0
20
40
60
80
Mounted on ceramic
substrate of
1200 mm
2
×2.2
mm
0
20
40
60
80
100 120 140 160
100 120 140 160
T
A
- Ambient Temperature - ˚C
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
= 40 A
(
DS
)
on
GS
PW
d
ite V)
Lim 4.5
=
=
10
1
10
10
Po
we
rD
0
I
D
- Drain Current - A
R V
(@
m
µ
s
s
10
I
D(DC)
= 10 A
m
s
0
m
s
iss
1
ipa
tio
n
Lim
ite
d
T
A
= 25 ˚C
Single Pulse
0.1
0.1
1
10
100
Remark
2
Mounted on ceramic substrate of 1200 mm x 2.2 mm
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 62.5˚C/W
10
1
0.1
0.01
0.001
Mounted on ceramic
substrate of 1200 mm
2
×
2.2 mm
Single Pulse
10
µ
100
µ
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
Data Sheet G14048EJ1V0DS00
5
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