DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1723
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The
µ
PA1723 is N-Channel MOS Field Effect Transistor
designed for power management switch.
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
•
Low on-state resistance
R
DS(on)1
= 6.7 mΩ MAX. (V
GS
= 4.5 V, I
D
= 7.0 A)
1.44
R
DS(on)2
= 7.4 mΩ MAX. (V
GS
= 4.0 V, I
D
= 7.0 A)
1.8 MAX.
1
5.37 MAX.
4
6.0 ±0.3
4.4
+0.10
–0.05
0.8
R
DS(on)3
= 8.7 mΩ MAX. (V
GS
= 2.5 V, I
D
= 7.0 A)
•
Low C
iss
: C
iss
= 3800 pF TYP.
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1723G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
20
±12
±13
±52
2.0
150
–55 to + 150
2
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Gate
Body
Diode
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2mm
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14026EJ1V0DS00 (1st edition)
Date Published December 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1998, 1999
µ
PA1723
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Cut-off Voltage
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 4.5 V, I
D
= 7.0 A
V
GS
= 4.0 V, I
D
= 7.0 A
V
GS
= 2.5 V, I
D
= 7.0 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 7.0 A
V
DS
= 20 V, V
GS
= 0 V
V
GS
= ±12 V, V
DS
= 0 V
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 7.0 A
V
GS(on)
= 4.5 V
V
DD
= 10 V
R
G
= 10
Ω
I
D
= 13 A
V
DD
= 16 V
V
GS
= 4.5 V
I
F
= 13.0 A, V
GS
= 0 V
I
F
= 13.0 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
3800
1200
700
70
440
230
300
47.0
11.0
12.0
0.75
68
70
0.5
15.0
MIN.
TYP.
5.4
5.5
6.5
0.9
32
10
±10
MAX.
6.7
7.4
8.7
1.5
UNIT
mΩ
mΩ
mΩ
V
S
5
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
D.U.T.
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet G14026EJ1V0DS00
µ
PA1723
5
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
50
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
I
D
- Drain Current - A
10
I
D
- Drain Current - A
40
30
V
GS
= 4.5 V
20
10
V
GS
= 4.0 V
V
GS
= 2.5 V
1
T
A
= 125˚C
75˚C
25˚C
-25˚C
V
DS
= 10 V
4
3
0.1
0
1
2
0
0.0
0.1
0.2
0.3
0.4
V
GS
-
Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
8
I
D
= 3 A
I
D
= 6 A
6
8
6
4
V
GS
= 2.5 V
V
GS
= 4.0 V
V
GS
= 4.5 V
4
2
2
0
−
100
−
50
0
50
100
150
0
0
5
V
GS
- Gate to Source Voltage - V
10
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
10
Pulsed
8
V
GS
= 2.5 V
6
V
GS
= 4.0 V
V
GS
= 4.5 V
4
V
GS(off)
- Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.0
V
DS
= 10 V
I
D
= 1 mA
0.5
2
0
0.1
1
10
100
0.2
−
50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
Data Sheet G14026EJ1V0DS00
3
µ
PA1723
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
100
V
DS
=10 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1 000
Pulsed
T
C
= -25˚C
T
C
= 25˚C
I
F
- Diode Forward Current - A
10
T
C
= 75˚C
T
C
= 125˚C
100
V
GS
= 4.0 V
V
GS
= 0 V
10
1
1
0.1
0.1
1
10
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
- Drain Current - A
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100 000
SWITCHING CHARACTERISTICS
10 000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
1 000
t
r
t
f
t
d(off)
10 000
C
iss
1 000
100
t
d(on)
C
oss
C
rss
10
V
DS
= 10 V
V
GS
= 4.5 V
R
G
= 10
Ω
100
100
0.1
1
10
100
1
0.1
1
10
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
Remark
2
Mounted on ceramic substrate of 1200 mm x 2.2
mm
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
25
20
15
10
5
V
DS
0
V
DD
= 16 V
10 V
4V
V
GS
10
8
6
4
2
0
0
10
20
30
40
50
60
Q
G
- Gate Charge - nC
100
10
1
0.1
1
10
100
I
D
- Drain Current - A
4
Data Sheet G14026EJ1V0DS00
V
GS
- Gate to Source Voltage - V
di/dt = 100A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
12
30
I
D
= 10 A
µ
PA1723
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
2.8
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
2.4
2.0
1.6
1.2
0.8
0.4
0
0
20
40
60
80
Mounted on ceramic
substrate of
1200 mm
2
×2.2
mm
0
20
40
60
80
100 120 140 160
100 120 140 160
T
A
- Ambient Temperature - ˚C
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
= 52 A
d
ite )
m V
Li 4.5
n)
=
G
S
1
10
10
Po
we
PW
m
=
s
10
0
I
D
- Drain Current - A
R
DS
(o
µ
s
(@
V
I
D(DC)
= 13 A
m
s
10
0
m
s
rD
iss
1
ipa
tio
n
Lim
ite
d
T
A
= 25 ˚C
0.1 Single Pulse
0.1
Remark
2
Mounted on ceramic substrate of 1200 mm x 2.2 mm
1
10
100
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 62.5˚C/W
10
1
0.1
0.01
0.001
Mounted on ceramic
substrate of 1200mm
2
×
2.2mm
Single Pulse
10
µ
100
µ
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
Data Sheet G14026EJ1V0DS00
5
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