DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1720
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The
µ
PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management
application of notebook computers.
FEATURES
•
Low On-Resistance
R
DS(on)1
= 25.0 mΩ MAX. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 33.0 mΩ MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)3
= 38.0 mΩ MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
•
Low C
iss
: C
iss
= 800 pF TYP.
•
Built-in G-S Protection Diode
•
Small and Surface Mount Package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1720G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0)
Gate to Source Voltage (V
DS
= 0)
Drain Current (DC)
Drain Current (Pulse)
Note1
N
ote2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
I
AS
E
AS
T
ch
T
stg
30
±20
±8
±32
2.0
8.0
6.4
150
–55 to + 150
V
V
A
A
W
A
mJ
°C
°C
Total Power Dissipation (T
A
= 25 °C)
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Note3
Note3
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
3.
Starting T
ch
= 25 °C, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G13888EJ2V0DS00 (2nd edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1998, 1999
µ
PA1720
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 10 V, I
D
= 4.0 A
V
GS
= 4.5 V, I
D
= 4.0 A
V
GS
= 4.0 V, I
D
= 4.0 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 4.0 A
V
DS
= 30 V, V
GS
= 0 V
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 4.0 A
V
GS(on)
= 10 V
V
DD
= 15 V
R
G
= 10
Ω
I
D
= 8 A
V
DD
= 24 V
V
GS
= 10 V
I
F
= 8 A, V
GS
= 0 V
I
F
= 8 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
800
250
96
20
80
40
40
14
2.3
3.6
0.86
30
40
1.5
3.0
MIN.
TYP.
20.0
25.5
29.0
2.0
7.0
10
±10
MAX.
25.0
33.0
38.0
2.5
UNIT
mΩ
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
I
D
90 %
90 %
I
D
V
GS
Wave Form
0
10 %
V
GS(on)
90 %
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1 %
I
D
Wave Form
0
10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet G13888EJ2V0DS00
µ
PA1720
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
2.8
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
2.4
2.0
1.6
1.2
0.8
0.4
0
20
40
60
80
Mounted on ceramic
substrate of
2
1200 mm
×
2.2 mm
0
20
40
60
80
100 120 140 160
100 120 140 160
T
A
- Ambient Temperature - ˚C
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(DC)
= 32 A
I
D
- Drain Current - A
µ
s
0
s
10
m
=
s
s
1
m
m
=
PW
10
00
1
PW
R
D
(V
S(on)
GS
L
= imit
10 ed
V)
10
I
D(DC)
= 8 A
Remark
Mounted on ceramic substrate of
1200 mm
×
2.2 mm
2
PW
=
PW
Po
we
rD
iss
=
1
ip
io
at
n
Li
m
0.1
0.01
T
A
= 25 ˚C
Single Pulse
0.1
1
V
DS
- Drain to Source Voltage - V
ite
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
d
10
100
r
th(t)
- Transient Thermal Resistance - ˚C/W
R
th(ch-A)
= 62.5
˚C/W
10
1
0.1
Mounted on ceramic
substrate of
1200 mm
2
x 2.2 mm
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G13888EJ2V0DS00
3
µ
PA1720
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
30
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
I
D
- Drain Current - A
10
I
D
- Drain Current - A
20
1
T
A
= 150˚C
75˚C
25˚C
−
25˚C
V
GS
= 10 V
4.5 V
4.0 V
10
0.1
0
V
DS
= 10 V
1
2
3
4
5
6
0
0.0
0.4
0.8
1.2
1.6
V
GS
-
Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
|y
fs
| - Forward Transfer Admittance - S
100
R
DS(on)
- Drain to Source On-State Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
80
Pulsed
10
T
A
=
−25˚C
25˚C
75˚C
150˚C
I
D
= 4 A
8A
60
40
1
20
0.1
0.01
V
DS
=10 V
Pulsed
0.1
1
10
100
0
0
5
10
15
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
80
V
GS
= 4.0 V
60
4.5 V
V
GS(off)
- Gate to Source Cut-off Voltage - V
100
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
V
DS
= 10 V
I
D
= 1 mA
2.0
5
40
1.0
10 V
20
0
0.1
1
10
100
0.0
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet G13888EJ2V0DS00
µ
PA1720
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
V
GS
= 10 V
0V
10
40
V
GS
= 4.0 V
30
4.5 V
10 V
20
1
10
-50
0
50
100
150
0.1
0.0
0.5
1.0
1.5
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
di / dt = 100 A /
µ
s
V
GS
= 0 V
1000
C
iss
100
C
oss
100
10
C
rss
10
0.01
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
F
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
16
14
30
V
DD
= 24 V
15 V
6V
V
GS
10
8
6
10
I
D
= 8 A
0
10
15
20
25
Q
G
- Gate Charge - nC
4
2
0
0
V
DS
5
12
V
DS
- Drain to Source Voltage - V
20
V
GS
- Gate to Source Voltage - V
Data Sheet G13888EJ2V0DS00
5
Embedded System
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