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UPA1717

Description
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size58KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1717 Overview

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1717
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
DESCRIPTION
The
µ
PA1717 is P-Channel MOS Field Effect
Transistor designed for power management
applications of notebook computers.
FEATURES
Low on-state resistance
R
DS(on)1
= 33 mΩ MAX. (V
GS
=
−10
V, I
D
=
−3
A)
1.44
R
DS(on)2
= 59 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−3
A)
1.8 MAX.
1
5.37 MAX.
4
6.0 ±0.3
4.4
+0.10
–0.05
Low C
iss
: C
iss
= 830 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
0.8
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
0.12 M
µ
PA1717G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−30
#
25
#
6
#
24
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
2.0
150
–55 to +150
Notes 1.
PW
10
µ
s, Duty Cycle
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14047EJ1V0DS00 (1st edition)
Date Published June 2000 NS CP(K)
Printed in Japan
©
1999, 2000

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