DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1717
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
DESCRIPTION
The
µ
PA1717 is P-Channel MOS Field Effect
Transistor designed for power management
applications of notebook computers.
FEATURES
•
Low on-state resistance
R
DS(on)1
= 33 mΩ MAX. (V
GS
=
−10
V, I
D
=
−3
A)
1.44
R
DS(on)2
= 59 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−3
A)
1.8 MAX.
1
5.37 MAX.
4
6.0 ±0.3
4.4
+0.10
–0.05
•
Low C
iss
: C
iss
= 830 pF TYP.
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
0.8
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
0.12 M
µ
PA1717G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−30
#
25
#
6
#
24
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
2.0
150
–55 to +150
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14047EJ1V0DS00 (1st edition)
Date Published June 2000 NS CP(K)
Printed in Japan
©
1999, 2000
µ
PA1717
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
=
−10
V, I
D
=
−3
A
V
GS
=
−4.5
V, I
D
=
−3
A
V
DS
=
−10
V, I
D
=
−1
mA
V
DS
=
−10
V, I
D
=
−3
A
V
DS
=
−30
V, V
GS
= 0 V
V
GS
=
#
25 V, V
DS
= 0 V
V
DS
=
−10
V
V
GS
= 0 V
f = 1 MHz
I
D
=
−3
A
V
GS(on)
=
−10
V
V
DD
=
−15
V
R
G
= 6
Ω
I
D
=
−6
A
V
DD
=
−24
V
V
GS
=
−10
V
I
F
= 6 A, V
GS
= 0 V
I
F
= 6 A, V
GS
= 0 V
di/dt = 100 A /
µ
s
830
330
130
15
120
70
50
15
3
5
0.82
35
15
−1.5
3.0
MIN.
TYP.
26
44
−2.0
7.5
−1
#
10
MAX.
33
59
−2.5
UNIT
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
V
DD
I
D
(−)
V
GS
(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
V
GS
(−)
V
GS
Wave Form
I
G
=
−2
mA
V
GS
(on)
90 %
R
L
V
DD
0
10 %
PG.
90 %
90 %
50
Ω
I
D
0 10 %
10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G14047EJ1V0DS00
µ
PA1717
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
2.8
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
2.4
2.0
1.6
1.2
0.8
0.4
0
20
40
60
Mounted on ceramic
substrate of
1200mm
2
x 2.2mm
0
20
40
60
80
100 120 140 160
80
100 120 140 160
T
A
- Ambient Temperature - ˚C
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
−100
I
D
- Drain Current - A
−10
d
ite V)
Lim
−
10
I
D(DC)
)
on
=
S(
R
D
V
GS
t
Po
(a
w
er
I
D(pulse)
PW
10
1m
=1
Remark
Mounted on ceramic substrate of
00
10
m
0m
s
s
s
µ
s
1200 mm x 2.2 mm
2
−1
Di
ss
ipa
tio
n
Lim
−0.1
T
A
= 25 ˚C
Single Pulse
−0.1
−1
ite
d
−0.01
−0.01
−10
−100
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th(t)
- Transient Thermal Resistance - ˚C/W
R
th(ch-A)
= 62.5
˚C/W
10
1
0.1
Mounted on ceramic
substrate of
1200 mm
2
x 2.2 mm
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G14047EJ1V0DS00
3
µ
PA1717
FORWARD TRANSFER CHARACTERISTICS
−100
−10
V
DS
=
−10
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−30
−25
Pulsed
V
GS
=
−10
V
I
D
- Drain Current - A
−1
−0.1
−0.01
−0.001
T
A
= 150˚C
75˚C
25˚C
−25˚C
I
D
- Drain Current - A
−20
−15
−10
−5
−4.5
V
0
−1
−2
−3
Pulsed
−4
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
V
GS
-
Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
|y
fs
| - Forward Transfer Admittance - S
100
T
A
=
−25˚C
25˚C
75˚C
150˚C
V
DS
=
−10
V
Pulsed
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
Pulsed
70
60
50
40
30
20
10
0
−5
−10
−15
I
D
=
−6
A
−3
A
10
1
0.1
−0.1
−1
−10
−100
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
Pulsed
80
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
−3.0
−2.5
−2.0
−1.5
−1.0
−0.5
0
−50
V
DS
=
−10
V
I
D
=
−1
mA
60
V
GS
=
−4.5
V
40
−10
V
20
0
–0.1
–1
–10
–100
– 1000
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet G14047EJ1V0DS00
µ
PA1717
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
V
GS
=
−4.5
V
10
0V
60
V
GS
=
−4.5
V
I
SD
- Diode Forward Current - A
40
−10
V
1
0.1
20
I
D
=
−3
A
150
0
−50
0
50
100
0.01
0.00
0.50
1.00
1.50
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
t
r
t
f
100
t
d(off)
1000
C
iss
C
oss
t
d(on)
10
V
GS(on)
=
−10
V
V
DD
=
−15
V
R
G
= 6
Ω
100
C
rss
10
−0.01
−0.1
−1
−10
−100
1
−0.1
−1
−10
−100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE CURRENT
1000
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
−30
100
−20
V
DS
=
−24
V
−15
V
−6
V
−12
V
GS
−10
−8
−6
10
−10
V
DS
0
5
10
15
20
−4
−2
0
1
−0.1
−1
−10
−100
I
F
- Diode Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/
µs
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
I
D
=
−6
A
Data Sheet G14047EJ1V0DS00
5
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