DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1708
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
switch.
8
PACKAGE DRAWINGS (Unit : mm)
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
•
Low on-resistance
R
DS(on)1
= 18.0 mΩ (TYP.) (V
GS
= 10 V, I
D
= 3.5 A)
1.44
1
5.37 MAX.
+0.10
–0.05
4
6.0 ±0.3
4.4
0.8
R
DS(on)2
= 28.0 mΩ (TYP.) (V
GS
= 4.5 V, I
D
= 3.5 A)
•
Low C
iss
: C
iss
= 730 pF (TYP.)
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
1.8 MAX.
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1708G
EQUIVARENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note3
Note4
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
40
±25
±7.0
±28
2.0
150
–55 to + 150
V
V
A
A
W
°C
°C
Gate
Drain
Body
Diode
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Notes 1.
V
GS
= 0 V
2.
V
DS
= 0 V
Gate
Protection
Diode
Source
3.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
4.
Mounted on ceramic substrate of 1200 mm x 1.7mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
2
Document No.
G13603EJ1V0DS00 (1st edition)
Date Published November 1998 NS CP(K)
Printed in Japan
©
1998
µ
PA1708
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 10 V, I
D
= 3.5 A
V
GS
= 4.5 V, I
D
= 3.5 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 3.5 A
V
DS
= 40 V, V
GS
= 0 V
V
GS
= ±25 V, V
DS
= 0 V
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 3.5 A
V
GS(on)
= 10 V
V
DD
= 20 V
R
G
= 10
Ω
I
D
= 7.0 A
V
DD
= 32 V
V
GS
= 10 V
I
F
= 7.0 A, V
GS
= 0 V
I
F
= 7.0 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
730
340
150
16
96
49
30
20
2.5
6.8
0.8
32
25
1.5
4.0
MIN.
TYP.
18.0
28.0
2.0
8.4
10
±10
MAX.
24.0
40.0
2.5
UNIT
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
µ
PA1708
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
2.8
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
2.4
2.0
1.6
1.2
0.8
0.4
0
20
40
60
80
Mounted on ceramic
substrate of
1200mm
2
×1.7mm
0
20
40
60
80
100 120 140 160
100 120 140 160
T
A
- Ambient Temperature - ˚C
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
d
ite
Lim 0 V)
)
on
=1
S(
R
D
V
GS
(
Mounted on ceramic
substrate of
1200mm
2
×
1.7mm
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
I
D(pulse)
= 28 A
I
D
- Drain Current - A
10
1
I
D(DC)
= 7 A
10
10
0
m
s
m
s
m
s
I
D
- Drain Current - A
Pw
=
30
V
GS
= 10 V
Po
we
r
20
4.5 V
1
Di
ss
ipa
tio
n
Lim
10
0.1
0.1
T
A
= 25 ˚C
Single Pulse
1
ite
d
10
100
0
0.2
0.4
0.6
0.8
V
DS -
Drain to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
I
D
- Drain Current - A
10
1
T
A
= 75˚C
125˚C
150˚C
T
A
= 25˚C
-25˚C
-50˚C
0.1
V
DS
= 10 V
0
1
2
3
4
5
6
7
8
V
GS
-
Gate to Source Voltage - V
3
µ
PA1708
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-a)
= 62.5˚C/W
10
1
0.1
0.01
0.001
100
µ
Mounted on ceramic
substrate of 1200mm
2
×
1.7mm
Single Pulse
1m
10 m
100 m
1
10
100
1 000
10 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
70
60
50
40
30
20
10
0
5
10
15
I
D
= 3.5 A
Pulsed
|y
fs
| - Forward Transfer Admittance - S
100
V
DS
=10 V
Pulsed
TA =
−50˚C
−25˚C
25˚C
10
75˚C
125˚C
150˚C
1
0.1
1
10
100
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
70
60
50
40
30
20
10
0
1
10
I
D
- Drain Current - A
10 V
V
GS(off)
- Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
V
DS
= 10 V
I
D
= 1 mA
3
V
GS
= 4.5 V
2
1
0
-50
0
50
100
150
T
ch
- Channel Temperature - ˚C
100
4
µ
PA1708
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
V
GS
= 4.5 V
30
10 V
20
I
F
- Diode Forward Current - A
40
100
V
GS
=10 V
10
0V
1
10
I
D
= 3.5 A
-40 -20
0
20 40 60 80 100 120 140
0.1
0
0.5
1.0
1.5
0
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
SWITCHING CHARACTERISTICS
1 000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
t
r
t
f
100
t
d(off)
t
d(on)
10
1000
C
iss
C
oss
100
C
rss
0.1
1
10
100
1
0.1
V
DS
= 20 V
V
GS
= 10 V
R
G
= 10
Ω
1
10
100
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
rr
- Reverse Recovery Diode - ns
V
DS
- Drain to Source Voltage - V
I
D
= 7 A
100
V
DD
= 32 V
20 V
8V
40
30
20
10
0
5
V
DS
10
V
GS
10
8
6
4
2
15
0
20
10
1
0.1
1
10
100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100A/
µ
s
V
GS
= 0 V
5
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