DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1705
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management
application of notebook computers.
PACKAGE DRAWING (Unit : mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
FEATURES
•
Super low on-state resistance
1.44
R
DS(on)1
= 19.0 mΩ TYP. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 30.0 mΩ TYP. (V
GS
= 4.5 V, I
D
= 4.0 A)
•
Low C
iss
: C
iss
= 750 pF TYP.
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
1.8 Max.
1
5.37 Max.
4
6.0 ±0.3
4.4
+0.10
–0.05
0.8
0.15
0.05 Min.
0.5 ±0.2
0.10
1.27
0.40
0.78 Max.
0.12 M
+0.10
–0.05
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1705G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0)
Gate to Source Voltage (V
DS
= 0)
Drain Current (DC)
Drain Current (Pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±25
±8
±50
2.0
150
–55 to + 150
V
V
A
A
W
°C
Gate
Body
Diode
Drain
EQUIVALENT CIRCUIT
Total Power Dissipation (T
A
= 25 °C)
Channel Temperature
Storage Temperature
°C
Gate
Protection
Diode
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm x 1.7 mm
Remark
2
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G12712EJ1V0DS00 (1st edition)
Date Published February 1999 NS CP(K)
Printed in Japan
©
1998, 1999
µ
PA1705
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 10 V, I
D
= 4.0 A
V
GS
= 4.5 V, I
D
= 4.0 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 4.0 A
V
DS
= 30 V, V
GS
= 0 V
V
GS
= ±25 V, V
DS
= 0 V
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 4.0 A
V
GS(on)
= 10 V
V
DD
= 15 V
R
G
= 10
Ω
I
D
= 8.0 A
V
DD
= 24 V
V
GS
= 10 V
I
F
= 8.0 A, V
GS
= 0 V
If = 8.0 A, V
GS
= 0 V
di/dt = 100A/
µ
s
750
350
160
19
107
50
32
19
2.4
6.3
0.8
33
22
1.5
4.0
MIN.
TYP.
19
30
2.0
8.4
10
±10
MAX.
27
40
2.5
UNIT
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
V
GS
V
GS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
90 %
90 %
I
D
PG.
R
G
R
G
= 10
Ω
0
I
D
10 %
V
GS (on)
90 %
R
L
V
DD
V
DD
50
Ω
V
GS
0
t
t = 1
µ
s
Duty Cycle
≤
1 %
D
Wave Form
I
0
10 %
t
d (on)
t
on
t
r
t
d (off)
t
off
10 %
t
f
2
Data Sheet G12712EJ1V0DS00
µ
PA1705
TYPICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
2.8
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
2.4
2.0
1.6
1.2
0.8
0.4
0
20
40
60
80
100 120 140 160
Mounted on ceramic
substrate of
1200 mm
2
×
1.7 mm
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0
20
40
60
80
100 120 140 160
T
A
- Ambient Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
= 50 A
it )
Lim 0 V
1
=
ed
T
A
- Ambient Temperature -
˚C
Remark
Mounted on ceramic substrate of 2000 mm
2
×
1.7 mm
1
m
s
I
D
- Drain Current - A
10
S(
S
RD t V
G
(a
)
on
I
D(DC)
= 8 A
10
10
0
m
s
m
s
Po
1
we
r D
DC
iss
ipa
tio
n
Lim
ite
d
0.1
0.1
T
A
= 25
˚C
Single Pulse
1
10
100
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th(t)
- Transient Thermal Resistance -
˚C/W
100
10
1
0.1
Mounted on ceramic
substrate of
1200 mm
2
to 1.7 mm
Single Pulse
Channel to Ambient
1m
10 m
100 m
1
10
100
1000
10 000
0.01
0.001
100
µ
PW - Pulse Width - s
Data Sheet G12712EJ1V0DS00
3
µ
PA1705
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
20
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
I
D
- Drain Current - A
10
I
D
- Drain Current - A
V
GS
= 10 V
V
GS
= 4.5 V
10
1
T
A
= 125
˚C
75
˚C
25
˚C
–25
˚C
0.1
0.01
0
V
DS
= 10 V
2
4
6
8
0
0.2
0.4
0.6
0.8
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
| y
fs
| - Forward Transfer Admittance - S
100
R
DS(on)
- Drain to Source On-State Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 10 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
150
I
D
= 4 A
100
10
T
A
= 125
˚C
75
˚C
25
˚C
–25
˚C
1
50
0.1
1
10
100
0
5
10
15
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
70
60
50
40
30
20
V
GS
=10 V
10
0
1
10
I
D
- Drain Current - A
100
V
GS
= 4.5 V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cutoff Voltage - V
2.0
V
GS
= 0 V
I
F
= 8 A
1.0
0
–20 0
20 40 60 80 100 120 140 160
T
ch
- Channel Temperature -
˚C
4
Data Sheet G12712EJ1V0DS00
µ
PA1705
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-State Resistance - mΩ
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
I
SD
- Diode Forward Current - A
50
100
40
V
GS
= 4.5 V
10
V
GS
= 0 V
1
30
20
V
GS
= 10 V
0.1
0
0.5
1.0
1.5
10
I
D
= 4 A
–20
0
20 40 60 80 100 120 140 160
V
SD
- Source to Drain Voltage - V
0
T
ch
- Channel Temperature -
˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1 000 0
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
1 000
t
r
100
t
d(off)
t
f
t
d(on)
10
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
1 000
C
iss
C
oss
100
C
rss
10
0.1
1
10
100
1
0.1
1
V
DD
= 15 V
V
GS(on)
= 10 V
R
G
= 10
Ω
10
100
V
GS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/
µ
s
V
GS
= 0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
V
DS
- Drain to Source Voltage - V
I
D
= 8 A
14
30
V
DD
= 24 V
15 V
6V
V
GS
12
10
8
6
10
V
DS
0
5
10
15
20
4
2
0
V
GS
- Gate to Source Voltage - V
100
20
10
1
0.1
1
10
100
I
F
- Diode Current - A
Q
G
- Gate Charge - nC
Data Sheet G12712EJ1V0DS00
5
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