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UPA1705G

Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size52KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1705G Overview

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1705
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management
application of notebook computers.
PACKAGE DRAWING (Unit : mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
FEATURES
Super low on-state resistance
1.44
R
DS(on)1
= 19.0 mΩ TYP. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 30.0 mΩ TYP. (V
GS
= 4.5 V, I
D
= 4.0 A)
Low C
iss
: C
iss
= 750 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
1.8 Max.
1
5.37 Max.
4
6.0 ±0.3
4.4
+0.10
–0.05
0.8
0.15
0.05 Min.
0.5 ±0.2
0.10
1.27
0.40
0.78 Max.
0.12 M
+0.10
–0.05
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1705G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0)
Gate to Source Voltage (V
DS
= 0)
Drain Current (DC)
Drain Current (Pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±25
±8
±50
2.0
150
–55 to + 150
V
V
A
A
W
°C
Gate
Body
Diode
Drain
EQUIVALENT CIRCUIT
Total Power Dissipation (T
A
= 25 °C)
Channel Temperature
Storage Temperature
°C
Gate
Protection
Diode
Notes 1.
PW
10
µ
s, Duty cycle
1 %
2.
Mounted on ceramic substrate of 1200 mm x 1.7 mm
Remark
2
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G12712EJ1V0DS00 (1st edition)
Date Published February 1999 NS CP(K)
Printed in Japan
©
1998, 1999

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