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UN921E

Description
Silicon NPN epitaxial planer transistor
CategoryDiscrete semiconductor    The transistor   
File Size187KB,15 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

UN921E Overview

Silicon NPN epitaxial planer transistor

UN921E Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 0.47
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.125 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Transistors with built-in Resistor
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Silicon NPN epitaxial planer transistor
For digital circuits
1.6±0.15
0.4
0.8±0.1
0.4
0.2
-0.05
0.15
-0.05
+0.1
Unit: mm
s
Features
1.6±0.1
1.0±0.1
0.5
q
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
s
Resistance by Part Number
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
Marking Symbol (R
1
)
UN9211
8A
10kΩ
UN9212
8B
22kΩ
UN9213
8C
47kΩ
UN9214
8D
10kΩ
UN9215
8E
10kΩ
UN9216
8F
4.7kΩ
UN9217
8H
22kΩ
UN9218
8I
0.51kΩ
UN9219
8K
1kΩ
UN9210
8L
47kΩ
UN921D
8M
47kΩ
UN921E
8N
47kΩ
UN921F
8O
4.7kΩ
UN921K
8P
10kΩ
UN921L
8Q
4.7kΩ
UNR921M
EL
2.2kΩ
UNR921N
EX
4.7kΩ
UNR921AJ
8X
100kΩ
UNR921BJ
8Y
100kΩ
UNR921CJ
8Z
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
5.1kΩ
10kΩ
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
100kΩ
47kΩ
0 to 0.1
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
Unit: mm
1.60±0.05
0.80
0.80±0.05
0.425 0.425
0.80
1.00±0.05
1.60
–0.03
+0.05
0.50
0.50
+0.1
0.85
–0.03
+0.05
+0.03
0.12
–0.01
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
125
125
–55 to +125
Unit
V
V
mA
mW
˚C
˚C
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
Internal Connection
R1
0 to 0.1
C
B
R2
E
+0.05
0.70
–0.03
0.27±0.02
0.80
1
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