M36W0R6040B1ZAQE datasheet, PDF

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M36W0R6040B1ZAQE: DescriptionMemory Circuit, Flash+PSRAM, CMOS, PBGA88,; Categorystorage storage; File Size440KB，22 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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M36W0R6040B1ZAQE Overview

Memory Circuit, Flash+PSRAM, CMOS, PBGA88,

M36W0R6040B1ZAQE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Micron Technology
package instruction	FBGA, BGA88,8X12,32
Reach Compliance Code	compliant
Maximum access time	70 ns
JESD-30 code	R-PBGA-B88
Memory IC Type	MEMORY CIRCUIT
Mixed memory types	FLASH+PSRAM
Number of terminals	88
Maximum operating temperature	85 °C
Minimum operating temperature	-30 °C
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA88,8X12,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.8 V
Certification status	Not Qualified
Maximum standby current	0.00011 A
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

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M36W0R6040T1

M36W0R604BT1

64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory

and 16 Mbit (1 Mb ×16) PSRAM, multi-chip package

Features

■

Multi-chip package

– 1 die of 64 Mbit (4 Mb x 16) Flash memory

– 1 die of 16 Mbit (1 Mb x 16) Pseudo SRAM

Supply voltage

– V

DDF

= V

DDP

= V

DDQ

= 1.7 V to 1.95 V

Low power consumption

Electronic signature

– Manufacturer Code: 20h

– Device Code (top flash configuration),

M36W0R6040T1: 8810h

– Device Code (bottom flash configuration),

M36W0R604BT1: 8811h

ECOPACK® packages available

■

FBGA

■

Stacked TFBGA88 (ZAQ)

8 × 10 mm

■

Block locking

– All blocks locked at Power-up

– Any combination of blocks can be locked

– WP

for Block Lock-Down

Security

– 128-bit user programmable OTP cells

– 64-bit unique device number

Common Flash Interface (CFI)

100 000 program/erase cycles per block

Flash memory

■

Programming time

– 8 µs by Word typical for Fast Factory

Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

Memory blocks

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 66 MHz

– Asynchronous/ Synchronous Page Read

mode

– Random Access: 70 ns

Dual operations

– Program Erase in one Bank while Read in

others

– No delay between Read and Write

operations

■

PSRAM

■

Access time: 70 ns

Low standby current: 110 µA

Deep power down current: 10 µA

■

November 2007

Rev 0.3

1/22

www.numonyx.com

M36W0R6040B1ZAQE Related Products

	M36W0R6040B1ZAQE	M36W0R6040T1ZAQE	M36W0R6040T1ZAQF	M36W0R6040B1ZAQF
Description	Memory Circuit, Flash+PSRAM, CMOS, PBGA88,	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88	Memory Circuit, Flash+PSRAM, CMOS, PBGA88,
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Micron Technology	Micron Technology	Micron Technology	Micron Technology
package instruction	FBGA, BGA88,8X12,32	TFBGA, BGA88,8X12,32	TFBGA, BGA88,8X12,32	FBGA, BGA88,8X12,32
Reach Compliance Code	compliant	compliant	compliant	compliant
Maximum access time	70 ns	70 ns	70 ns	70 ns
JESD-30 code	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88
Memory IC Type	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
Mixed memory types	FLASH+PSRAM	FLASH+PSRAM	FLASH+PSRAM	FLASH+PSRAM
Number of terminals	88	88	88	88
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-30 °C	30 °C	30 °C	-30 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	TFBGA	TFBGA	FBGA
Encapsulate equivalent code	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH
power supply	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.00011 A	0.00011 A	0.00011 A	0.00011 A
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM

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