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X28LV010J-90T1

Description
EEPROM, 128KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
Categorystorage    storage   
File Size141KB,18 Pages
ManufacturerXicor Inc.
Download Datasheet Parametric View All

X28LV010J-90T1 Overview

EEPROM, 128KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32

X28LV010J-90T1 Parametric

Parameter NameAttribute value
MakerXicor Inc.
package instructionPLASTIC, LCC-32
Reach Compliance Codeunknown
Maximum access time90 ns
JESD-30 codeR-PQCC-J32
length13.97 mm
memory density1048576 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height3.56 mm
Maximum supply voltage (Vsup)3.63 V
Minimum supply voltage (Vsup)2.97 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
width11.43 mm
Maximum write cycle time (tWC)5 ms
1M
X28LV010
3.3 Volt, Byte Alterable E
2
PROM
128K x 8 Bit
FEATURES
• Access Time: 70, 90, 120, 150ns
• Simple Byte and Page Write
—Single 3.3V±10% supply
—No external high voltages or V
PP
control circuits
—Self-timed
• no erase before write
• no complex programming algorithms
• no overerase problem
• Low Power CMOS
—Active: 20mA
—Standby: 20µA
• Software Data Protection
—Protects data against system level inadvertant
writes
• High Speed Page Write Capability
• Highly Reliable Direct Write
Cell
—Endurance: 100,000 write cycles
—Data retention: 100 Years
• Early End of Write Detection
—DATA polling
—Toggle bit polling
BLOCK DIAGRAM
DESCRIPTION
The Xicor X28LV010 is a 128K x 8 E
2
PROM, fabri-
cated with Xicor's proprietary, high performance, float-
ing gate CMOS technology. Like all Xicor
programmable non-volatile memories the X28LV010
requires a single voltage supply. The X28LV010 fea-
tures the JEDEC approved pinout for byte-wide memo-
ries, compatible with industry standard EPROMs.
The X28LV010 supports a 256-byte page write opera-
tion, effectively providing a 12µs/byte write cycle and
enabling the entire memory to be typically written in
less than 2.5 seconds. The X28LV010 also features
DATA Polling and Toggle Bit Polling, system software
support schemes used to indicate the early completion
of a write cycle. In addition, the X28LV010 supports
Software Data Protection option.
Xicor E
2
PROMs are designed and tested for applica-
tions requiring extended endurance. Data retention is
specified to be greater than 100 years.
A
8
–A
16
X Buffers
Latches and
Decoder
1M-Bit
E
2
PROM
Array
A
0
–A
7
Y Buffers
Latches and
Decoder
I/O Buffers
and Latches
I/O
0
–I/O
7
Data Inputs/Outputs
CE
OE
WE
V
CC
V
SS
Control
Logic and
Timing
Xicor, Inc. 2000 Patents Pending
2000-4003 9/6/00 EP
Characteristics subject to change without notice.
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