IXTD42N25P-5S datasheet, PDF - EEWORLD Datasheet

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IXTD42N25P-5S: DescriptionPower Field-Effect Transistor, 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.244 X 0.205 INCH, DIE; CategoryDiscrete semiconductor The transistor; File Size40KB，1 Pages; ManufacturerIXYS; Environmental Compliance

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IXTD42N25P-5S Overview

Power Field-Effect Transistor, 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.244 X 0.205 INCH, DIE

IXTD42N25P-5S Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	DIE
package instruction	0.244 X 0.205 INCH, DIE
Reach Compliance Code	compli
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Number of components	1
Operating mode	ENHANCEMENT MODE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PolarHT

MOSFET, very low R

DS(on)

Type

DSS

max.

IXTD 110N055P-5S

IXTD 75N10P-5S

IXTD 110N10P-6S

IXTD 140N10P-7S

IXTD 170N10P-8S

IXTD 200N10P-88

IXTD 62N15P-5S

IXTD 96N15P-6S

IXTD 120N15P-7S

IXTD 150N15P-8S

IXTD 180N15P-88

IXTD 50N20P-5S

IXTD 74N20P-6S

IXTD 96N20P-7S

IXTD 120N20P-8S

IXTD 140N20P-88

IXTD 42N25P-5S

IXTD 64N25P-6S

IXTD 82N25P-7S

IXTD 100N25P-8S

IXTD 120N25P-88

IXTD 36N30P-5S

IXTD 52N30P-6S

IXTD 69N30P-7S

IXTD 88N30P-8S

IXTD 102N30P-88

100

DSon

max.

mΩ

100

135

Chip

type

Chip size

dimensions

6.20 x 5.20

6.86 x 6.86

8.91 x 7.15

13.34 x 7.14

11.13 x 7.15

6.20 x 5.20

6.86 x 6.86

8.91 x 7.15

11.13 x 7.15

13.34 x 7.14

6.20 x 5.20

6.86 x 6.86

8.91 x 7.15

11.13 x 7.15

13.34 x 7.14

6.20 x 5.20

6.86 x 6.86

8.91 x 7.15

11.13 x 7.15

13.34 x 7.14

6.20 x 5.20

6.86 x 6.86

8.91 x 7.15

11.13 x 7.15

13.34 x 7.14

mils

244 x 205

270 x 270

351 x 281

438 x 281

525 x 281

244 x 205

270 x 270

351 x 281

525 x 281

244 x 205

270 x 270

351 x 281

525 x 281

244 x 205

270 x 270

351 x 281

525 x 281

244 x 205

270 x 270

351 x 281

525 x 281

12 mil x 3

12 mil x 4

15 mil x 4

12 mil x 6

15 mil x 6

12 mil x 3

12 mil x 4

15 mil x 4

12 mil x 6

15 mil x 6

12 mil x 3

12 mil x 4

15 mil x 4

12 mil x 6

15 mil x 6

12 mil x 3

12 mil x 4

15 mil x 4

12 mil x 6

15 mil x 6

12 mil x 3

12 mil x 4

15 mil x 4

12 mil x 6

15 mil x 6

IXTP 110N055P

IXTP 75N10P

IXTQ 110N10P

IXTQ 140N10P

IXTQ 170N10P

IXTK 200N10P

IXTP 62N15P

IXTQ 96N15P

IXTQ 120N15P

IXTQ 150N15P

IXTK 180N15P

IXTP 50N20P

IXTQ 74N20P

IXTQ 96N20P

IXTQ 120N20P

IXTK 140N20P

IXTP 42N25P

IXTQ 64N25P

IXTQ 82N25P

IXTQ 100N25P

IXTK 120N25P

IXTP 36N30P

IXTQ 52N30P

IXTQ 69N30P

IXTQ 88N30P

IXTK 102N30P

Source -

bond wire

recommended

Equivalent

device

data sheet

PolarHT

MOSFETs for very low R

DS(on)

Polar

MOSFETs feature a proprietary cell design and

processing (patent pending) that has resulted in a

MOSFET with a 30% reduction in R

DS(on)

per unit area

along with a decrease in gate charge. IXYS has also

reduced the wafer thickness, which substantially

reduces thermal resistance. The combination of lower

DS(on)

, lower gate charge and higher power dissipation

capability has resulted in a new family of MOSFETs,

which will increase the cost effectiveness in SMPS

applications. IXYS will also introduce HiPerFET

versions in which the t

of the body diode is reduced

to make them suitable for phase-shift bridges, motor

control and Uninterruptible Power Supply applications.

150

200

250

300

This table reflects only new designed chips. Please contact factory for older designs.

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