Transistors with built-in Resistor
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Silicon NPN epitaxial planer transistor
For digital circuits
2.1±0.1
Unit: mm
s
Features
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
q
3
2
0.9±0.1
0 to 0.1
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
Marking Symbol (R
1
)
UN5211
8A
10kΩ
UN5212
8B
22kΩ
UN5213
8C
47kΩ
UN5214
8D
10kΩ
UN5215
8E
10kΩ
UN5216
8F
4.7kΩ
UN5217
8H
22kΩ
UN5218
8I
0.51kΩ
UN5219
8K
1kΩ
UN5210
8L
47kΩ
UN521D
8M
47kΩ
UN521E
8N
47kΩ
UN521F
8O
4.7kΩ
UN521K
8P
10kΩ
UN521L
8Q
4.7kΩ
UN521M
EL
2.2kΩ
UN521N
EX
4.7kΩ
UN521T
EZ
22kΩ
UN521V
FD
2.2kΩ
UN521Z
FF
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.7±0.1
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
Internal Connection
R1
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
150
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.15
-0.05
+0.1
s
Resistance by Part Number
0.2
0.3
-0
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
+0.1
1
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
s
Electrical Characteristics
Parameter
Collector cutoff current
UN5211
UN5212/5214/521E/521D/521M/521N/521T
UN5213
Emitter
cutoff
current
UN5215/5216/5217/5210
UN521F/521K
UN5219
UN5218/521L/521V
UN521Z
Collector to base voltage
Collector to emitter voltage
UN5211
UN5212/521E
UN5213/5214/521M
Forward
current
transfer
ratio
UN5215*/5216*/5217*/5210*
UN521F/521D/5219
UN5218/521K/521L
UN521N/521T
UN521V
UN521Z
Collector to emitter saturation voltage
UN521V
Output voltage high level
Output voltage low level
UN5213/521K
UN521D
UN521E
Transition frequency
UN5211/5214/5215/521K
UN5212/5217/521T
Input
resis-
tance
UN5213/521D/521E/5210
UN5216/521F/521L/521N/521Z
UN5218
UN5219
UN521M/521V
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
min
typ
max
0.1
0.5
0.5
0.2
0.1
I
EBO
V
EB
= 6V, I
C
= 0
0.01
1.0
1.5
2.0
0.4
V
CBO
V
CEO
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
50
50
35
60
80
160
h
FE
V
CE
= 10V, I
C
= 5mA
30
20
80
6
60
V
CE(sat)
V
OH
I
C
= 10mA, I
B
= 0.3mA
I
C
= 10mA, I
B
= 1.5mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 2.5V, R
L
= 1kΩ
V
OL
V
OC
= 5V, V
B
= 3.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 10V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 6V, R
L
= 1kΩ
f
T
V
CB
= 10V, I
E
= –2mA, f = 200MHz
150
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
(+30%)
kΩ
4.9
0.2
0.2
0.2
0.2
MHz
V
400
20
200
0.25
0.25
V
V
V
460
V
V
mA
Unit
µA
µA
* h
FE
rank classification (UN5125/5216/5217/5210)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
s
Electrical Characteristics (continued)
Parameter
UN5211/5212/5213/521L
UN5214
UN5218/5219
UN521D
Resis-
tance
ratio
UN521E
UN521F/521T
UN521K
UN521M
UN521N
UN521V
UN521Z
R
1
/R
2
Symbol
(Ta=25˚C)
Conditions
min
0.8
0.17
0.08
typ
1.0
0.21
0.1
4.7
2.14
0.47
2.13
0.047
0.1
1.0
0.21
max
1.2
0.25
0.12
Unit
3
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Common characteristics chart
P
T
— Ta
240
Total power dissipation P
T
(mW)
200
160
120
80
40
0
0
40
80
120
160
Ambient temperature Ta (˚C)
Characteristics charts of UN5211
I
C
— V
CE
160
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
400
h
FE
— I
C
V
CE
=10V
30
10
3
1
0.3
0.1
–25˚C
0.03
0.01
0.1
120
100
80
60
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
Forward current transfer ratio h
FE
140
I
B
=1.0mA
0.9mA
0.8mA
Collector current I
C
(mA)
300
Ta=75˚C
200
25˚C
100
–25˚C
0.2mA
40
20
0
0
2
4
6
8
10
12
25˚C
Ta=75˚C
0.1mA
0
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
1000
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Characteristics charts of UN5212
I
C
— V
CE
160
V
CE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
=10V
Ta=25˚C
140
I
B
=1.0mA
0.9mA
0.8mA
120
100
80
0.3mA
60
40
20
0
0
2
4
6
8
10
12
0.2mA
Collector to emitter saturation voltage V
CE(sat)
(V)
30
10
3
1
0.3
0.1
–25˚C
0.03
0.01
0.1
0.7mA
0.6mA
0.5mA
0.4mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
Ta=75˚C
200
25˚C
–25˚C
25˚C
Ta=75˚C
100
0.1mA
0
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
1000
300
100
30
10
3
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN5213
I
C
— V
CE
160
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
400
Ta=25˚C
h
FE
— I
C
V
CE
=10V
Collector current I
C
(mA)
120
100
80
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
30
10
3
1
0.3
25˚C
0.1
0.03
0.01
0.1
–25˚C
Ta=75˚C
Forward current transfer ratio h
FE
140
I
B
=1.0mA
350
300
250
200
150
100
50
0
Ta=75˚C
25˚C
–25˚C
60
40
20
0
0
2
4
6
8
10
12
0.2mA
0.1mA
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
5
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