2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
| Parameter Name | Attribute value |
| Maker | FORMOSA |
| Reach Compliance Code | unknow |
| Is Samacsys | N |
| Other features | UL RECOGNIZED |
| Minimum breakdown voltage | 100 V |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE |
| JESD-30 code | R-PSIP-W4 |
| Maximum non-repetitive peak forward current | 60 A |
| Number of components | 4 |
| Phase | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Maximum output current | 2 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Maximum repetitive peak reverse voltage | 100 V |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | SINGLE |
| Base Number Matches | 1 |
| KBP201 | KBP200 | KBP202 | KBP204 | KBP206 | KBP208 | KBP210 | |
|---|---|---|---|---|---|---|---|
| Description | 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE | 2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE | 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | 2 A, SILICON, BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),BR-7W | BRIDGE RECTIFIER DIODE | 2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
| Other features | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED |
| Minimum breakdown voltage | 100 V | 50 V | 200 V | 400 V | 600 V | 800 V | 1000 V |
| Configuration | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE |
| JESD-30 code | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 |
| Maximum non-repetitive peak forward current | 60 A | 60 A | 60 A | 60 A | 60 A | 60 A | 60 A |
| Number of components | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Phase | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| Maximum output current | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Maximum repetitive peak reverse voltage | 100 V | 50 V | 200 V | 400 V | 600 V | 800 V | 1000 V |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maker | FORMOSA | - | FORMOSA | FORMOSA | FORMOSA | FORMOSA | FORMOSA |