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BYW96DT/R

Description
DIODE 1.25 A, 800 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size60KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BYW96DT/R Overview

DIODE 1.25 A, 800 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode

BYW96DT/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
applicationFAST SOFT RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current1.25 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current150 µA
Maximum reverse recovery time0.3 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYW96 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of April 1982
1996 Jun 07

BYW96DT/R Related Products

BYW96DT/R BYW96ET/R BYW96D BYW96E BYW96DAMO BYW96EAMO
Description DIODE 1.25 A, 800 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode DIODE 1.25 A, 1000 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode DIODE 1.25 A, 800 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode DIODE 1.25 A, 1000 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode DIODE 3.7 A, 1000 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode DIODE 3.7 A, 1000 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 E-LALF-W2 E-LALF-W2
Contacts 2 2 2 2 2 2
Reach Compliance Code unknown unknow unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
application FAST SOFT RECOVERY FAST SOFT RECOVERY FAST SOFT RECOVERY FAST SOFT RECOVERY FAST SOFT RECOVERY FAST SOFT RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 E-LALF-W2 E-LALF-W2
Maximum non-repetitive peak forward current 70 A 70 A 70 A 70 A 70 A 70 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 1.25 A 1.25 A 1.25 A 1.25 A 3.7 A 3.7 A
Package body material GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 1000 V 800 V 1000 V 1000 V 1000 V
Maximum reverse current 150 µA 150 µA 150 µA 150 µA 150 µA 150 µA
Maximum reverse recovery time 0.3 µs 0.3 µs 0.3 µs 0.3 µs 0.3 µs 0.3 µs
surface mount NO NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Minimal System 4
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