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KM44C16100BS-5

Description
Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
Categorystorage    storage   
File Size339KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM44C16100BS-5 Overview

Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

KM44C16100BS-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSOP32,.46
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length20.95 mm
memory density67108864 bit
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals32
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP32,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshNO
Maximum standby current0.001 A
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
KM44C16000B, KM44C16100B
CMOS DRAM
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time(-45, -5 or -6), package type(SOJ or TSOP-II) are optional fea-
tures of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 16Mx4 Fast
Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption
and high reliability.
FEATURES
• Part Identification
- KM44C16000B(5.0V, 8K Ref.)
- KM44C16100B(5.0V, 4K Ref.)
Active Power Dissipation
Unit : mW
Speed
-45
-5
-6
Refresh Cycles
Part
NO.
KM44C16000B*
KM44C16100B
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
RAS
CAS
W
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +5.0V±10% power supply
4K
715
660
605
8K
550
495
440
FUNCTIONAL BLOCK DIAGRAM
Control
Clocks
Vcc
Vss
VBB Generator
Refresh Control
Refresh Counter
Memory Array
16,777,216 x 4
Cells
Sense Amps & I/O
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
Performance Range
Speed
-45
-5
-6
Refresh Timer
Row Decoder
Data in
Buffer
DQ0
to
DQ3
Data out
Buffer
OE
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
80ns
90ns
110ns
t
PC
31ns
35ns
40ns
A0~A12
(A0~A11)*1
A0~A10
(A0~A11)*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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