RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
| Parameter Name | Attribute value |
| Maker | CRYSTALONICS Inc. |
| package instruction | SMALL OUTLINE, R-CDSO-N3 |
| Reach Compliance Code | unknown |
| Other features | LOW NOISE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 30 V |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 6 pF |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-CDSO-N3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 200 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Minimum power gain (Gp) | 8 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
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