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JANJ2N3019

Description
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size46KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANJ2N3019 Overview

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,

JANJ2N3019 Parametric

Parameter NameAttribute value
Objectid1813438868
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/391
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Data Sheet No. 2N3019
Type 2N3019
Geometry
4500
Polarity NPN
Qual Level: JAN - JANS
Features:
General-purpose transistor for
switching and amplifier applica-
tons.
Housed in a
TO-5
case.
Also available in chip form using
the
4500
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/391
which
Semicoa meets in all cases.
Radiation Graphs available.
Generic Part Number:
2N3019
REF: MIL-PRF-19500/391
TO-5
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Rating
80
140
7.0
1.0
-55 to +175
-55 to +175
Unit
V
V
V
mA
o
C
C
o

JANJ2N3019 Related Products

JANJ2N3019
Description Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
Objectid 1813438868
package instruction CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant
ECCN code EAR99
Maximum collector current (IC) 1 A
Collector-emitter maximum voltage 80 V
Configuration SINGLE
Minimum DC current gain (hFE) 50
JEDEC-95 code TO-5
JESD-30 code O-MBCY-W3
Number of components 1
Number of terminals 3
Package body material METAL
Package shape ROUND
Package form CYLINDRICAL
Polarity/channel type NPN
Certification status Not Qualified
Guideline MIL-19500/391
surface mount NO
Terminal form WIRE
Terminal location BOTTOM
transistor applications SWITCHING
Transistor component materials SILICON

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