GBJ2501 datasheet, PDF - EEWORLD Datasheet

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GBJ2501: Description25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size219KB，2 Pages; ManufacturerFORMOSA; Websitehttp://www.formosams.com/

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GBJ2501 Overview

25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

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Bridge Rectifier

GBJ25005 THRU GBJ2510

■

Features

●

Formosa MS

■

Outline Dimensions and Mark

HOLE FOR NO.

6 SCREW

1.193(30.3)

1.169(29.7)

25A

RRM

50V~1000V

●

玻璃钝化芯片

Glass passivated chip

●

耐正向浪涌电流½力高

High surge forward current capability

GBJ

■

Applications

●

½一般电源单相桥式整流用

General purpose 1 phase Bridge

rectifier applications

.106(2.7)

.096(2.3)

深

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse

Voltage

平均整流输出电流

Average Rectified Output

Current

正向（不重复）浪涌电流

Surge(Non-

repetitive)Forward Current

正向浪涌电流的平方对电流

浪涌持续时间的积分值

Current Squared Time

存储温度

Storage Temperature

结温

Junction Temperature

绝缘耐压

Dielectric Strength

安装扭矩

Mounting Torque

圳

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

int

.228(5.8)

.189(4.8)

.165(4.2)

.150(3.8)

.189(4.8)

.173(4.4)

.150(3.8)

.134(3.4)

.122(3.1)

DIA

.800(20.3)

.776(19.7)

.441(11.2)

.425(10.8)

.153(3.9)

.134(3.4)

.708(18.0)

.669(17.0)

.402(10.2)

.386(9.8)

.303(7.7) .303(7.7)

.287(7.3) .287(7.3)

.031(0.8)

.023(0.6)

Dimensions in inches and (millimeters)

■

Limiting Values（Absolute Maximum Rating）

符号单½

Symbol Unit

RRM

60Hz正弦波，

用散热片

=98℃

电阻负½½

With heatsink T

=98℃

60Hz sine wave,

无散热片

=25℃

R-load

Without heatsink T

=25℃

60H

正弦波，一个周期，T

=25℃

60H

sine wave, 1 cycle, T

=25℃

1ms≤t<8.3ms Tj=25℃，单个二极管

1ms≤t<8.3ms Tj=25℃，Rating of per diode

条件

Conditions

GBJ25

005 01 02 04 06 08 10

50 100 200 400 600 800 1000

3.5

350

FSM

℃

kg·

508

-55 ~+150

stg

dis

Tor

端子与外壳之间外加交流电，一分钟

Terminals to case，AC 1 minute

推荐值：5kg·cm

Recommend torque：5kg·cm

2.5

■

Electrical Characteristics

（T

=25℃ Unless otherwise specified）

参数名称

Item

符号单½

Symbol Unit

RRM

J-A

℃/W

J-C

μA

测试条件

Test Condition

=12.5A,

脉冲测试，单个二极管的额定值

=12.5A, Pulse measurement, Rating of per diode

RRM

,脉冲测试，单个二极管的额定值

RRM

, Pulse measurement, Rating of per diode

结和环境之间，无散热片

Between junction and ambient, Without heatsink

结和管壳之间，用散热片

Between junction and case, With heatsink

最大值

Max

1.1

1.0

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

热阻

Thermal Resistance

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

Issued Date

2009/08/10

Revised Date

2010/03/10

Revision

Page.

Page 1

DS-242146

GBJ2501 Related Products

	GBJ2501	GBJ25005	GBJ2502	GBJ2506	GBJ2508	GBJ2520
Description	25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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