EEWORLDEEWORLDEEWORLD

Part Number

Search

GBJ2506

Description
4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size219KB,2 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Download Datasheet Compare View All

GBJ2506 Online Shopping

Suppliers Part Number Price MOQ In stock  
GBJ2506 - - View Buy Now

GBJ2506 Overview

4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

Bridge Rectifier
GBJ25005 THRU GBJ2510
Features
Formosa MS
Outline Dimensions and Mark
HOLE FOR NO.
6 SCREW
1.193(30.3)
1.169(29.7)
I
o
25A
V
RRM
50V~1000V
玻璃钝化芯片
Glass passivated chip
耐正向浪涌电流½力高
High surge forward current capability
GBJ
Applications
½一般电源单相桥式整流用
General purpose 1 phase Bridge
rectifier applications
.106(2.7)
.096(2.3)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse
Voltage
平均整流输出电流
Average Rectified Output
Current
正向(不重复)浪涌电流
Surge(Non-
repetitive)Forward Current
正向浪涌电流的平方对电流
浪涌持续时间的积分值
Current Squared Time
存储温度
Storage Temperature
结温
Junction Temperature
绝缘耐压
Dielectric Strength
安装扭矩
Mounting Torque
FM
SK
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
e
int
+
~
r1
31
80
6
-
30
.228(5.8)
.189(4.8)
.165(4.2)
.150(3.8)
58
0
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.134(3.4)
.122(3.1)
DIA
.800(20.3)
.776(19.7)
.441(11.2)
.425(10.8)
~
.153(3.9)
.134(3.4)
.708(18.0)
.669(17.0)
.402(10.2)
.386(9.8)
.303(7.7) .303(7.7)
.287(7.3) .287(7.3)
.031(0.8)
.023(0.6)
Dimensions in inches and (millimeters)
Limiting Values(Absolute Maximum Rating)
符号 单½
Symbol Unit
V
RRM
V
60Hz正弦波,
用散热片
T
c
=98℃
电阻负½½
With heatsink T
c
=98℃
60Hz sine wave,
无散热片
T
a
=25℃
R-load
Without heatsink T
a
=25℃
60H
Z
正弦波,一个周期,T
j
=25℃
60H
Z
sine wave, 1 cycle, T
j
=25℃
1ms≤t<8.3ms Tj=25℃,单个二极管
1ms≤t<8.3ms Tj=25℃,Rating of per diode
条件
Conditions
GBJ25
005 01 02 04 06 08 10
50 100 200 400 600 800 1000
25
3.5
350
I
O
A
I
FSM
A
2
It
A
2
S
KV
kg·
cm
508
-55 ~+150
-55 ~+150
T
stg
T
j
V
dis
Tor
端子与外壳之间外加交流电,一分钟
Terminals to case,AC 1 minute
推荐值:5kg·cm
Recommend torque:5kg·cm
2.5
8
Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
参数名称
Item
符号 单½
Symbol Unit
V
FM
I
RRM
R
θ
J-A
℃/W
R
θ
J-C
V
μA
测试条件
Test Condition
I
FM
=12.5A,
脉冲测试,单个二极管的额定值
I
FM
=12.5A, Pulse measurement, Rating of per diode
V
RM
=V
RRM
,脉冲测试,单个二极管的额定值
V
RM
=V
RRM
, Pulse measurement, Rating of per diode
结和环境之间,无散热片
Between junction and ambient, Without heatsink
结和管壳之间,用散热片
Between junction and case, With heatsink
最大值
Max
1.1
10
22
1.0
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
热阻
Thermal Resistance
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2010/03/10
Revision
B
Page.
2
Page 1
DS-242146

GBJ2506 Related Products

GBJ2506 GBJ25005 GBJ2501 GBJ2502 GBJ2508 GBJ2520
Description 4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 964  1305  1194  1496  1995  20  27  25  31  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号