• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• ISL70419SEH radiation acceptance testing
- High dose rate (50-300rad(Si)/s): 300krad(Si)
- Low dose rate (10mrad(Si)/s): 50krad(Si)
• ISL73419SEH radiation acceptance testing
- Low dose rate (10mrad(Si)/s): 50krad(Si)
• SEE hardness (see SEE report for details)
- SEL/SEB LET
TH
(V
S
= ±18V): 86.4MeV•cm
2
/mg
Applications
• Precision instrumentation
• Spectral analysis equipment
• Active filter blocks
• Thermocouples and RTD reference buffers
• Data acquisition
• Power supply control
Related Literature
For a full list of related documents, visit our website:
•
ISL70419SEH, ISL73419SEH
device pages
10
9
C
1
SET DURATION (µs)
8.2nF
CH2 = V
OUT
- B
V
S
= ±15V
8
7
6
5
4
3
2
V
-
1
0
-8
-6
V
+
-
ISL70419SEH
V
IN
R
1
1.84k
R
2
4.93k
3.3nF
OUTPUT
+
C
2
SALLEN-KEY LOW PASS FILTER (f
C
= 10kHz)
-4
-2
0
SET EXTREME DEVIATION (V)
2
4
FIGURE 1. TYPICAL APPLICATION
FIGURE 2. SET DEVIATION vs DURATION FOR LET = 60MeV•cm
2
/mg
FN8653 Rev.3.00
Nov 21, 2019
Page 1 of 23
ISL70419SEH, ISL73419SEH
Ordering Information
ORDERING/
SMD NUMBER
(Note
2)
5962F1422601VXC
5962F1422601V9AX
5962L1422603VXC
5962L1422603V9A
N/A
N/A
N/A
N/A
N/A
NOTES:
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb
and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
3. Die product tested at T
A
= + 25°C. The wafer probe test includes functional and parametric testing sufficient to make the die capable of meeting the
electrical performance outlined in
“Electrical Specifications” on page 4.
4. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts are intended for
engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across temperature specified in the DLA SMD and
are in the same form and fit as the qualified device. The /SAMPLE parts are capable of meeting the electrical limits and conditions specified in the
DLA SMD. The /SAMPLE parts do not receive 100% screening across temperature to the DLA SMD electrical limits. These part types do not come
with a Certificate of Conformance because they are not DLA qualified devices.
5. Evaluation boards use the /PROTO parts and /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity.
PART NUMBER
(Note
1)
ISL70419SEHVF
ISL70419SEHVX (Note
3)
ISL73419SEHVF
ISL73419SEHVX (Note
3)
ISL70419SEHF/PROTO (Note
4)
ISL73419SEHF/PROTO (Note
4)
N/A
N/A
RADIATION HARDNESS
(Total Ionizing Dose)
HDR to 300krad(Si),
LDR to 50krad(Si)
LDR to 50krad(Si)
TEMPERATURE
RANGE (°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(RoHS Compliant)
14 Ld Flatpack with EPAD
DIE
14 Ld Flatpack with EPAD
DIE
14 Ld Flatpack with EPAD
14 Ld Flatpack with EPAD
DIE
DIE
K14.C
K14.C
K14.C
PKG.
DWG. #
K14.C
ISL70419SEHX/SAMPLE (Notes
3, 4)
N/A
ISL73419SEHX/SAMPLE (Notes
3, 4)
N/A
ISL70419SEHEV1Z (Note
5)
Evaluation Board
FN8653 Rev.3.00
Nov 21, 2019
Page 2 of 23
ISL70419SEH, ISL73419SEH
Pin Configuration
14 LD FLATPACK
TOP VIEW
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
1
2
3
4
5
6
7
- +
B
+ -
C
A
- +
D
+ -
14
13
12
11
10
9
8
OUT_D
-IN_D
+IN_D
V-
+IN_C
-IN_C
OUT_C
Pin Descriptions
PIN NUMBER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PIN NAME
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
OUT_C
-IN_C
+IN_C
V-
+IN_D
-IN_D
OUT_D
EPAD
V+
500Ω
IN-
500Ω
IN+
V+
OUT
V-
CIRCUIT 2
V-
EQUIVALENT CIRCUIT
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
N/A
Amplifier A output
DESCRIPTION
Amplifier A inverting input
Amplifier A non-inverting input
Positive power supply
Amplifier B non-inverting input
Amplifier B inverting input
Amplifier B output
Amplifier C output
Amplifier C inverting input
Amplifier C non-inverting input
Negative power supply
Amplifier D non-inverting input
Amplifier D inverting input
Amplifier D output
EPAD under Package (unbiased, tied to package lid)
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
6.
JA
is measured in free air with the component mounted on a high-effective thermal conductivity test board with direct attach features. See
TB379.
7. For
JC
, the case temperature location is the center of the package underside.
V
S
± 15V, V
CM
= 0, V
O
= 0V, T
A
= +25°C, unless otherwise noted. Boldface limits apply across the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s (ISL70419SEH only);
or across a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
Input Offset Voltage
SYMBOL
V
OS
TEST CONDITIONS
MIN
(Note
8)
TYP
10
MAX
(Note
8)
85
110
Offset Voltage Drift
Input Bias Current
TCV
OS
I
B
T
A
= -55°C to +125°C
Over high and low dose radiation
Input Bias Current Temperature
Coefficient
Input Offset Current
TCI
B
I
OS
T
A
= -55°C to +125°C
Over high and low dose radiation
Input Offset Current Temperature
Coefficient
Input Voltage Range
Common-Mode Rejection Ratio
TCI
OS
V
CM
CMRR
Established by characterization not
tested
Established by CMRR test
V
CM
= -13V to +13V
Established by characterization not
tested
Established by characterization not
tested
-2.5
-5
-15
-5
-2.5
-3
-10
-3
-13
120
120
Power Supply Rejection Ratio
PSRR
V
S
= ±2.25V to ±20V
120
120
Open-Loop Gain
Output Voltage High
A
VOL
V
OH
V
O
= -13V to +13V, R
L
= 10kΩ to ground
R
L
= 10kΩ to ground
3,000
13.5
13.2
R
L
= 2kΩ to ground
13.3
13.0
13.55
14,000
13.7
145
145
0.42
1
0.08
0.1
0.08
1
2.5
5
15
5
2.5
3
10
3
13
UNIT
µV
µV
µV/
°
C
nA
nA
nA
pA/°C
nA
nA
nA
pA/°C
V
dB
dB
dB
dB
V/mV
V
V
V
V
Electrical Specifications
FN8653 Rev.3.00
Nov 21, 2019
Page 4 of 23
ISL70419SEH, ISL73419SEH
V
S
± 15V, V
CM
= 0, V
O
= 0V, T
A
= +25°C, unless otherwise noted. Boldface limits apply across the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s (ISL70419SEH only);
or across a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)
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