Transistors with built-in Resistor
UN2154
Silicon PNP epitaxial planer transistor
2.8
–0.3
+0.2
Unit: mm
0.65±0.15
For digital circuits
0.65±0.15
1.5
–0.05
+0.25
2.9
–0.05
0.95
q
q
q
High forward current transfer ratio h
FE
.
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
1.9±0.2
+0.2
s
Features
0.95
1
3
1.45
0 to 0.1
2
1.1
–0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–30
–30
–100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
0.8
EIAJ:SC-59
Mini Type Package
Marking Symbol:
EV
Internal Connection
R1(10kΩ)
C
B
R2
(47kΩ)
E
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
(Ta=25˚C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/R
2
f
T
V
CB
= –10V, I
E
= 1mA, f = 200MHz
Conditions
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CB
= –30V, I
E
= 0
V
CE
= –30V, I
B
= 0
V
EB
= –3V, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –50mA, I
B
= – 0.33mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
–30%
10
0.213
80
–4.9
– 0.2
+30%
80
– 0.5
–1.2
min
–30
–30
– 0.1
– 0.5
– 0.1
typ
max
Unit
V
V
µA
µA
mA
—
V
V
V
kΩ
—
MHz
0.16
–0.06
+0.2
+0.1
0.4
–0.05
+0.1
1
Transistors with built-in Resistor
P
T
— Ta
250
–200
Ta=25˚C
–175
UN2154
I
C
— V
CE
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
I
C
/I
B
=10
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
200
–150
–125
–100
–75
–50
–25
–10
150
–0.4mA
–0.3mA
–0.2mA
–1
25˚C
Ta=75˚C
–0.1
–25˚C
100
50
–0.1mA
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
–0.01
–1
–10
–100
–1000
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
h
FE
— I
C
300
6
Ta=75˚C
250
25˚C
200
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=–10V
f=1MHz
I
E
=0
Ta=25˚C
–10000
I
O
— V
IN
V
O
=–5V
Ta=25˚C
Forward current transfer ratio h
FE
5
Output current I
O
(
µA
)
–1000
–25˚C
4
150
3
–100
100
2
–10
50
1
0
–1
–10
–100
–1000
0
–1
–10
–100
–1
–0.4
–0.6
–0.8
–1
–1.2
–1.4
Collector current I
C
(mA)
Collector to base voltage V
CB
(V)
Input voltage V
IN
(V)
V
IN
— I
O
–100
V
O
=–0.2V
Ta=25˚C
Input voltage V
IN
(V)
–10
–1
–0.1
–0.01
–0.1
–1
–10
–100
Output current I
O
(mA)
2
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