U630H16
HardStore
2K x 8 nvSRAM
Features
F
Packages: PDIP28 (300 mil)
PDIP28 (600 mil)
SOP28 (300 mil)
F
High-performance CMOS nonvo-
latile static RAM 2048 x 8 bits
F
25, 35 and 45 ns Access Times
F
12, 20 and 25 ns Output Enable
Access Times
F
Hardware STORE Initiation
(STORE Cycle Time < 10 ms)
F
Automatic STORE Timing
F
10 STORE cycles to EEPROM
F
10 years data retention in
EEPROM
F
Automatic RECALL on Power Up
F
Hardware RECALL Initiation
(RECALL Cycle Time < 20
µs)
F
Unlimited RECALL cycles from
EEPROM
F
Unlimited Read and Write to
SRAM
F
Single 5 V
±
10 % Operation
F
Operating temperature ranges:
5
Description
The U630H16 has two separate
modes of operation: SRAM mode
and nonvolatile mode, determined
by the state of the NE pin.
In SRAM mode, the memory ope-
rates as an ordinary static RAM. In
nonvolatile operation, data is trans-
ferred in parallel from SRAM to
EEPROM or from EEPROM to
SRAM. In this mode SRAM
functions are disabled.
The U630H16 is a fast static RAM
(25, 35, 45 ns), with a nonvolatile
erasable
PROM
electrically
(EEPROM) element incorporated
in each static memory cell. The
SRAM can be read and written an
unlimited number of times, while
independent nonvolatile data resi-
des in EEPROM. Data transfers
from the SRAM to the EEPROM
(the STORE operation), or from the
EEPROM to the SRAM (the
RECALL operation) are initiated
through the state of the NE pin.
The U630H16 combines the high
performance and ease of use of a
fast SRAM with nonvolatile data
integrity.
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvola-
tile information is transferred into
the SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
F
F
0 to 70
°C
-40 to 85
°C
CECC 90000 Quality Standard
ESD characterization according
MIL STD 883C M3015.7-HBM
(classification see IC Code Num-
bers)
Pin Configuration
Pin Description
NE
n.c.
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
24
6
23
7
PDIP
22
8
SOP
21
9
20
10
19
11
18
12
17
13
16
14
15
1
2
3
4
5
28
27
26
25
VCC
W
n.c.
A8
A9
n.c.
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
Signal Name
A0 - A10
DQ0 - DQ7
E
G
W
NE
VCC
VSS
Signal Description
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Nonvolatile Enable
Power Supply Voltage
Ground
Top View
December 12, 1997
1
U630H16
Block Diagram
EEPROM
Array
STORE
Row Deco-
A5
A6
A7
A8
A9
SRAM
Array
32 Rows x
64 x 8 Columns
RECALL
V
CC
V
SS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Input Buffers
Column I/O
Column Decoder
Store/
Recall
Control
V
CC
A0 A1 A2 A3 A4 A10
G
NE
E
W
Truth Table for SRAM Operations
Operating Mode
Standby/not selected
Internal Read
Read
Write
*
H or L
Characteristics
All voltages are referenced to V
SS
= 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of
≤
5 ns, measured between 10 % and 90 % of V
I
, as well as
input levels of V
IL
= 0 V and V
IH
= 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the t
dis
-times and t
en
-times, in which cases transition is measured
±
200 mV from steady-state voltage.
E
H
L
L
L
NE
*
H
H
H
W
*
H
H
L
G
*
H
L
*
DQ0 - DQ7
High-Z
High-Z
Data Outputs Low-Z
Data Inputs High-Z
Absolute Maximum Ratings
a
Power Supply Voltage
Input Voltage
Output Voltage
Power Dissipation
Operating Temperature
Storage Temperature
C-Type
K-Type
Symbol
V
CC
V
I
V
O
P
D
T
a
T
stg
Min.
-0.5
-0.3
-0.3
Max.
7
V
CC
+0.5
V
CC
+0.5
1
Unit
V
V
V
W
°C
°C
°C
0
-40
-65
70
85
150
a: Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2
December 12, 1997
U630H16
Recommended
Operating Conditions
Power Supply Voltage
Input Low Voltage
Input High Voltage
Symbol
V
CC
V
IL
V
IH
-2 V at Pulse Width
10 ns permitted
Conditions
Min.
4.5
-0.3
2.2
Max.
5.5
0.8
V
CC
+0.3
Unit
V
V
V
C-Type
DC Characteristics
Operating Supply Current
b
Symbol
I
CC1
V
CC
V
IL
V
IH
t
c
t
c
t
c
Average Supply Current during
STORE
c
I
CC2
V
CC
E
W
V
IL
V
IH
V
CC
E
t
c
t
c
t
c
Average Supply Current
at t
cR
= 200 ns
b
(Cycling CMOS Input Levels)
Standby Supply Current
d
(Stable CMOS Input Levels)
I
CC3
V
C
C
W
V
IL
V
IH
V
CC
E
V
IL
V
IH
Conditions
Min.
= 5.5 V
= 0.8 V
= 2.2 V
= 25 ns
= 35 ns
= 45 ns
= 5.5 V
≥
V
CC
-0.2 V
≥
V
CC
-0.2 V
≤
0.2 V
≥
V
CC
-0.2 V
= 5.5 V
≥
V
IH
= 25 ns
= 35 ns
= 45 ns
= 5.5 V
≥
V
CC
-0.2 V
≤
0.2 V
≥
V
CC
-0.2 V
= 5.5 V
≥
V
CC
-0.2 V
≤
0.2 V
≥
V
CC
-0.2 V
30
23
20
15
90
80
75
6
Max.
K-Type
Unit
Min.
Max.
95
85
80
7
mA
mA
mA
mA
Standby Supply Current
d
(Cycling TTL Input Levels)
I
CC(SB)1
34
27
23
15
mA
mA
mA
mA
I
CC(SB)
1
1
mA
b: I
CC1
and I
CC3
are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.
The current I
CC1
is measured for WRITE/READ - ratio of 1/2.
c: I
CC2
is the average current required for the duration of the STORE cycle (STORE Cycle Time).
d: Bringing E
≥
V
IH
will not produce standby current levels until any nonvolatile cycle in progress has timed out. See MODE SELECTION
table. The current I
CC(SB)1
is measured for WRITE/READ - ratio of 1/2.
December 12, 1997
3
U630H16
C-Type
DC Characteristics
Symbol
V
CC
I
OH
I
OL
V
CC
V
OH
V
OL
V
CC
High
Low
Output Leakage Current
High at Three-State- Output
Low at Three-State- Output
I
OHZ
I
OLZ
I
IH
I
IL
V
IH
V
IL
V
CC
V
OH
V
OL
Conditions
Min.
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
V
OH
V
OL
I
OH
I
OL
= 4.5 V
=-4 mA
= 8 mA
= 4.5 V
= 2.4 V
= 0.4 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 0V
1
-1
-1
1
µA
µA
1
-1
-1
1
µA
µA
2.4
0.4
-4
8
8
Max.
Min.
2.4
0.4
-4
Max.
V
V
mA
mA
K-Type
Unit
SRAM MEMORY OPERATIONS
No.
1
2
3
4
5
6
7
8
9
Switching Characteristics
Read Cycle
Read Cycle Time
f
Address Access Time to Data Valid
g
Chip Enable Access Time to Data Valid
Output Enable Access Time to Data Valid
E HIGH to Output in High-Z
h
G HIGH to Output in High-Z
h
E LOW to Output in Low-Z
G LOW to Output in Low-Z
Output Hold Time after Addr. Change
g
Symbol
Alt.
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
ELQX
t
GLQX
t
AXQX
t
ELICCH
t
EHICCL
IEC
t
cR
t
a(A)
t
a(E)
t
a(G)
t
dis(E)
t
dis(G)
t
en(E)
t
en(G)
t
v(A)
t
PU
t
PD
5
0
3
0
25
Min.
25
25
25
12
13
13
5
0
3
0
25
Max.
35
Min. Max.
35
35
35
20
17
17
5
0
3
0
35
Min.
45
45
Unit
Max.
ns
45
45
25
20
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
45
ns
10 Chip Enable to Power Active
e
11 Chip Disable to Power Standby
d, e
e:
f:
g:
h:
Parameter guaranteed but not tested.
Device is continuously selected with E and G both LOW.
Address valid prior to or coincident with E transition LOW.
Measured
±
200 mV from steady state output voltage.
4
December 12, 1997
U630H16
Read Cycle 1: Ai-controlled (during Read cycle: E = G = V
IL
, W = NE = V
IH
)
f
1
t
cR
Ai
Address Valid
2
t
a(A )
DQi
Output
Previous
Data Valid
9
t
v(A)
AAAAAAAAAAAA
AAAAAAAAAAAA
AAAAAAAAAAAA
AAAAAAAAAAAA
Output Data
Valid
Read Cycle 2: G-, E-controlled (during Read cycle: W = NE = V
IH
)
g
1
t
cR
Ai
Address Valid
2
t
a(A)
E
7
t
en(E)
3
t
a(E)
5
t
dis(E)
G
DQi
Output
ACTIVE
High Impedance
10
t
PU
8
t
en(G)
4
t
a(G)
6
t
dis(G)
Output Data
Valid
AAAAAAAAAAAA
AAAAAAAAAAAA
AAAAAAAAAAAA
AAAAAAAAAAAA
11
t
PD
I
CC
STANDBY
No. Switching Characteristics
Write Cycle
12 Write Cycle Time
13 Write Pulse Width
14 Write Pulse Width Setup Time
15 Address Setup Time
16 Address Valid to End of Write
17 Chip Enable Setup Time
18 Chip Enable to End of Write
19 Data Setup Time to End of Write
20 Data Hold Time after End of Write
21 Address Hold after End of Write
22 W LOW to Output in High-Z
h, i
23 W HIGH to Output in Low-Z
Symbol
Alt. #1 Alt. #2
t
AVAV
t
WLWH
t
WLEH
t
AVWL
t
AVWH
t
ELWH
t
ELE
H
t
DVWH
t
WHDX
t
WHAX
t
WLQZ
t
WHQX
t
DVEH
t
EHDX
t
EHAX
t
AVEL
t
AVEH
t
AVAV
IEC
t
cW
t
w(W)
t
su(W)
t
su(A)
t
su(A-WH)
t
su(E)
t
w(E)
t
su(D)
t
h(D)
t
h(A)
t
dis(W)
t
en(W)
5
25
35
45
Unit
Min. Max. Min. Max. Min. Max.
25
20
20
0
20
20
20
12
0
0
10
5
35
30
30
0
30
30
30
18
0
0
13
5
45
35
35
0
35
35
35
20
0
0
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
December 12, 1997
5
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