PESD5V0F1BRLD
006
D-2
Femtofarad bidirectional ESD protection diode
Rev. 1 — 30 January 2014
Product data sheet
1. Product profile
1.1 General description
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to
protect one signal line from the damage caused by ESD and other transients. The device
is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
The combination of extremely low capacitance, high ESD maximum rating and ultra small
package makes the device ideal for high-speed data line protection and antenna
protection applications.
DF
N1
1.2 Features and benefits
Bidirectional ESD protection of one line
ESD protection up to 10 kV (contact)
and 15 kV (air)
IEC 61000-4-2; level 4 (ESD)
Femtofarad capacitance: C
d
= 400 fF
Low ESD clamping voltage: 30 V
Package height typ. 0.37 mm
at 30 ns and
8
kV
AEC-Q101 qualified
Very low leakage current: I
RM
< 1 nA
1.3 Applications
10/100/1000 Mbit/s Ethernet
FireWire
High-speed data lines
SIM card protection
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
Audio and video equipment
Antenna protection
1.4 Quick reference data
Table 1.
Symbol
Per device
V
RWM
C
d
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
-
-
-
0.4
5.5
0.55
V
pF
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD5V0F1BRLD
Femtofarad bidirectional ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
1
2
1
sym045
Simplified outline
Graphic symbol
2
Transparent
top view
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0F1BRLD
DFN1006D-2
Description
leadless ultra small plastic package;
2 terminals; body 1
0.6
0.4 mm
Version
SOD882D
Type number
4. Marking
Table 4.
Marking codes
Marking code
H
Type number
PESD5V0F1BRLD
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
I
PPM
T
j
T
amb
T
stg
[1]
Parameter
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
[1]
Min
-
-
40
55
Max
2.5
+125
+125
+125
Unit
A
C
C
C
Device stressed with ten non-repetitive current pulses (8/20
s
exponential decay waveform according to
IEC 61000-4-5 and IEC 61643-321).
PESD5V0F1BRLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 30 January 2014
2 of 11
NXP Semiconductors
PESD5V0F1BRLD
Femtofarad bidirectional ESD protection diode
Table 6.
ESD maximum ratings
T
amb
= 25
C unless otherwise specified.
Symbol
Per device
V
ESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
IEC 61000-4-2
(air discharge)
MIL-STD-883
(human body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[1]
Parameter
Conditions
Min
-
-
-
Max
10
15
10
Unit
kV
kV
kV
[1]
Table 7.
Standard
Per device
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
001aaa631
120
I
PP
(%)
80
e
-t
100 % I
PP
; 8 μs
001aaa630
I
PP
100 %
90 %
50 % I
PP
; 20 μs
40
10 %
t
r
= 0.6 ns to 1 ns
0
10
20
30
t
p
(ms)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0F1BRLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 30 January 2014
3 of 11
NXP Semiconductors
PESD5V0F1BRLD
Femtofarad bidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
Per device
V
RWM
I
RM
V
BR
C
d
V
CL
r
dyn
[1]
[2]
Conditions
Min
-
-
6
-
[1]
[1]
[2]
Typ
-
1
8
0.4
-
-
1.5
Max
5.5
100
10
0.55
11
15
-
Unit
V
nA
V
pF
V
V
reverse standoff
voltage
reverse leakage current V
RWM
= 5 V
breakdown voltage
diode capacitance
clamping voltage
dynamic resistance
I
R
= 1 mA
f = 1 MHz; V
R
= 0 V
I
PP
= 1 A
I
PPM
= 2.5 A
I
R
= 10 A
-
-
-
Device stressed with 8/20
s
exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANSI/ESD STM5.5.1-2008.
0.5
C
d
(pF)
0.4
006aab598
I
PPM
I
PP
-V
CL
-V
BR
-V
RWM
I
R
I
RM
-I
RM
-I
R
V
RWM
V
BR
V
CL
0.3
-
+
0.2
−6.0
−2.0
2.0
V
R
(V)
6.0
-I
PP
-I
PPM
006aab325
f = 1 MHz; T
amb
= 25
C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
V-I characteristics for a bidirectional
ESD protection diode
PESD5V0F1BRLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 30 January 2014
4 of 11
NXP Semiconductors
PESD5V0F1BRLD
Femtofarad bidirectional ESD protection diode
ESD TESTER
Rd
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
40 dB
ATTENUATOR
50 Ω
Cs
IEC 61000-4-2, ed.2
C
s
= 150 pF; R
d
= 330 Ω
DUT
(DEVICE
UNDER
TEST)
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 50 V/div
horizontal scale = 15 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
GND
vertical scale = 50 V/div
horizontal scale = 15 ns/div
unclamped
-8
kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped
-8
kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
aaa-010899
Fig 5.
ESD clamping test setup and waveforms
PESD5V0F1BRLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 30 January 2014
5 of 11
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