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UN1224

Description
Silicon NPN epitaxial planer transistor
CategoryDiscrete semiconductor    The transistor   
File Size57KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

UN1224 Overview

Silicon NPN epitaxial planer transistor

UN1224 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 4.54
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
Transistors with built-in Resistor
UN1221/1222/1223/1224
Silicon NPN epitaxial planer transistor
6.9±0.1
0.4
2.5±0.1
1.0
1.0
3.5±0.1
2.4±0.2 2.0±0.2
0.45±0.05
1.25±0.05
2
1
2.5
Unit: mm
1.5
1.5 R0.9
R0.9
For digital circuits
s
Features
q
q
0.85
s
Resistance by Part Number
q
q
q
q
0.55±0.1
UN1221
UN1222
UN1223
UN1224
(R
1
)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
(R
2
)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
(Ta=25˚C)
Ratings
50
50
500
600
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
3
2.5
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1
C
B
R2
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter
cutoff
current
UN1221
UN1222
UN1223/1224
(Ta=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
V
OH
V
OL
f
T
R
1
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CE
= 10V, I
C
= 100mA
I
C
= 100mA, I
B
= 5mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 500Ω
V
CC
= 5V, V
B
= 3.5V, R
L
= 500Ω
V
CB
= 10V, I
E
= –50mA, f = 200MHz
(–30%)
200
2.2
4.7
10
R
1
/R
2
0.8
1.0
0.22
1.2
(+30%)
kΩ
4.9
0.2
50
50
40
50
60
0.25
V
V
V
MHz
min
typ
max
1
1
5
2
1
V
V
mA
Unit
µA
µA
Collector to base voltage
Collector to emitter voltage
Forward
current
transfer
ratio
UN1221
UN1222
UN1223/1224
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input
resis-
tance
UN1221/1224
UN1222
UN1223
Resistance ratio
UN1224
4.1±0.2
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0±0.1
R
0.
7
4.5±0.1
1

UN1224 Related Products

UN1224 UN1221
Description Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planer transistor
Maker Panasonic Panasonic
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 4.54 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 60 40
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.6 W 0.6 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
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