UN1221 datasheet, PDF - EEWORLD Datasheet

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UN1221: DescriptionSilicon NPN epitaxial planer transistor; CategoryDiscrete semiconductor The transistor; File Size57KB，4 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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UN1221 Overview

Silicon NPN epitaxial planer transistor

UN1221 Parametric

Parameter Name	Attribute value
Maker	Panasonic
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.6 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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Transistors with built-in Resistor

UN1221/1222/1223/1224

Silicon NPN epitaxial planer transistor

6.9±0.1

0.4

2.5±0.1

1.0

3.5±0.1

2.4±0.2 2.0±0.2

0.45±0.05

1.25±0.05

2.5

Unit: mm

1.5

1.5 R0.9

R0.9

For digital circuits

Features

0.85

Resistance by Part Number

0.55±0.1

UN1221

UN1222

UN1223

UN1224

)

2.2kΩ

4.7kΩ

10kΩ

2.2kΩ

)

2.2kΩ

4.7kΩ

10kΩ

(Ta=25˚C)

Ratings

500

600

150

–55 to +150

Unit

˚C

2.5

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

stg

1:Base

2:Collector

3:Emitter

M Type Mold Package

Internal Connection

Electrical Characteristics

Parameter

Collector cutoff current

Emitter

cutoff

current

UN1221

UN1222

UN1223/1224

(Ta=25˚C)

Symbol

CBO

CEO

EBO

CBO

CEO

CE(sat)

Conditions

= 50V, I

= 0

= 50V, I

= 0

= 6V, I

= 0

= 10µA, I

= 0

= 2mA, I

= 0

= 10V, I

= 100mA

= 100mA, I

= 5mA

= 5V, V

= 0.5V, R

= 500Ω

= 5V, V

= 3.5V, R

= 500Ω

= 10V, I

= –50mA, f = 200MHz

(–30%)

200

2.2

4.7

0.8

1.0

0.22

1.2

(+30%)

kΩ

4.9

0.2

0.25

MHz

min

typ

max

Unit

µA

Collector to base voltage

Collector to emitter voltage

Forward

current

transfer

ratio

UN1221

UN1222

UN1223/1224

Collector to emitter saturation voltage

Output voltage high level

Output voltage low level

Transition frequency

Input

resis-

tance

UN1221/1224

UN1222

UN1223

Resistance ratio

UN1224

4.1±0.2

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

1.0±0.1

4.5±0.1

UN1221 Related Products

	UN1221	UN1224
Description	Silicon NPN epitaxial planer transistor	Silicon NPN epitaxial planer transistor
Maker	Panasonic	Panasonic
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3
Reach Compliance Code	unknown	unknow
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 4.54
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	40	60
JESD-30 code	R-PSIP-T3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.6 W	0.6 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz

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