PSMN057-200B
15 August 2013
D2
PA
K
N-channel TrenchMOS SiliconMAX standard level FET
Product data sheet
1. General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified
for use in computing, communications, consumer and industrial applications only.
2. Features and benefits
•
•
•
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
3. Applications
•
•
DC-to-DC converters
Switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
mb
= 25 °C
Min
-
-
-
Typ
-
-
-
Max
200
39
250
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
V
GS
= 10 V; I
D
= 17 A; T
j
= 25 °C
-
41
57
mΩ
Dynamic characteristics
Q
GD
V
GS
= 10 V; I
D
= 39 A; V
DS
= 160 V;
T
j
= 25 °C
-
37
50
nC
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NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
2
1
3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
6. Ordering information
Table 3.
Ordering information
Package
Name
PSMN057-200B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
7. Marking
Table 4.
Marking codes
Marking code
PSMN057-200B
Type number
PSMN057-200B
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 100 °C
T
mb
= 25 °C
I
DM
P
tot
T
stg
T
j
PSMN057-200B
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
Max
200
200
20
27.5
39
156
250
175
175
Unit
V
V
V
A
A
A
W
°C
°C
2 / 11
peak drain current
total power dissipation
storage temperature
junction temperature
pulsed; T
mb
= 25 °C
T
mb
= 25 °C
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
15 August 2013
NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
Symbol
I
S
I
SM
E
DS(AL)S
Parameter
source current
peak source current
Conditions
T
mb
= 25 °C
pulsed; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 35 A;
V
sup
≤ 50 V; unclamped; t
p
= 100 µs;
R
GS
= 50 Ω
V
sup
≤ 50 V; V
GS
= 10 V; T
j(init)
= 25 °C;
R
GS
= 50 Ω; unclamped
003aae646
Min
-
-
Max
39
156
Unit
A
A
Source-drain diode
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
non-repetitive avalanche
current
-
300
mJ
I
AS
-
35
A
P
der
(%)
80
60
40
20
0
100
I
D
(%)
80
60
40
20
0
100
003aae647
0
50
100
150
T
mb
(°C)
200
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
Normalized continuous drain current as a
function of mounting base temperature
10
3
I
DM
(A)
10
2
003aae648
10
2
l
AS
(A)
003aae660
R
DS(on)
= V
DS
/ I
D
tp = 10 µs
100 µs
10
T
j
prior to avalanche = 150 °C
25 °C
10
D.C.
1 ms
10 ms
100 ms
1
1
10
10
2
V
DS
(V)
10
3
1
10
- 3
10
- 2
10
- 1
1
t
AV
(ms)
10
T
mb
= 25 °C; I
DM
is single pulse
Fig. 3.
Safe operating area; continuous and peak drain Fig. 4.
currents as a function of drain-source voltage
unclamped inductive load
Single-shot avalanche rating; avalanche current
as a function of avalanche period
PSMN057-200B
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
15 August 2013
3 / 11
NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
1
Z
th(j-mb)
(K/W)
10
- 1
δ = 0.5
0.2
0.1
0.05
0.02
single pulse
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
t
p
T
Conditions
Min
-
Typ
-
Max
0.6
Unit
K/W
R
th(j-a)
minimum footprint ; FR4 board
-
50
-
K/W
003aae649
P
δ=
10
- 2
t
T
10
- 1
1
t
p
(s)
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
I
DSS
drain leakage current
V
DS
= 200 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 200 V; V
GS
= 0 V; T
j
= 25 °C
I
GSS
gate leakage current
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 17 A; T
j
= 175 °C
V
GS
= 10 V; I
D
= 17 A; T
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
Min
200
178
1
2
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.03
2
2
-
41
Max
-
-
-
4
4.4
500
10
100
100
165
57
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
V
GS(th)
PSMN057-200B
© NXP N.V. 2013. All rights reserved
Product data sheet
15 August 2013
4 / 11
NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
Symbol
R
G
Parameter
internal gate
resistance (AC)
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
f = 1 MHz
Min
-
Typ
2
Max
4.1
Unit
Ω
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
I
D
= 39 A; V
DS
= 160 V; V
GS
= 10 V;
T
j
= 25 °C
-
-
-
V
DS
= 25 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C
-
-
-
V
DS
= 100 V; R
L
= 2.7 Ω; V
GS
= 10 V;
R
G(ext)
= 5.6 Ω; T
j
= 25 °C
-
-
-
-
measured from tab to centre of die ;
T
j
= 25 °C
measured from source lead to source
bond pad ; T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 30 V; T
j
= 25 °C
003aae650
96
13
37
3750
385
180
18
58
105
78
3.5
7.5
135
-
50
5036
520
252
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
-
-
Source-drain diode
V
SD
t
rr
Q
r
50
source-drain voltage
reverse recovery time
recovered charge
-
-
-
0.85
133
895
1.2
173
-
003aae651
V
ns
nC
l
D
(A)
40
30
20
10
0
V
GS
(V) = 10
8
6
5.2
5
4.8
4.6
4.4
4.2
0
0.4
0.8
1.2
1.6
2
V
DS
(V)
0.14
R
DS(on)
(Ω)
0.1
4.8
5
5.2
4.2 4.4
4.6
0.06
6
0.02
V
GS
(V) = 10
0
10
20
30
40
I
D
(A)
50
T
j
= 25 °C
Fig. 6.
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
T
j
= 25 °C
Drain-source on-state resistance as a function
of drain current; typical values
PSMN057-200B
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
15 August 2013
5 / 11
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