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UN1123

Description
Silicon PNP epitaxial planer transistor
CategoryDiscrete semiconductor    The transistor   
File Size78KB,6 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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UN1123 Overview

Silicon PNP epitaxial planer transistor

UN1123 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Silicon PNP epitaxial planer transistor
For digital circuits
s
Features
q
q
Unit: mm
6.9±0.1
1.5
2.5±0.1
1.0
1.0±0.1
R
0.
7
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.4
1.5 R0.9
R0.9
3.5±0.1
1.0
2.4±0.2 2.0±0.2
0.45±0.05
2
1
2.5
0.85
s
Resistance by Part Number
q
q
q
q
q
q
UN1121
UN1122
UN1123
UN1124
UN112X
UN112Y
(R
1
)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
0.27kΩ
3.1kΩ
(R
2
)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
0.55±0.1
3
2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–500
600
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
R1
Internal Connection
1.25±0.05
C
B
R2
E
4.1±0.2
4.5±0.1
1

UN1123 Related Products

UN1123 UN112X UN1121 UN1124 UN112Y
Description Silicon PNP epitaxial planer transistor Silicon PNP epitaxial planer transistor Silicon PNP epitaxial planer transistor Silicon PNP epitaxial planer transistor Silicon PNP epitaxial planer transistor
Maker Panasonic Panasonic Panasonic Panasonic Panasonic
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3 3 3
Reach Compliance Code unknow unknown unknown unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 18.51 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 4.54 BUILT-IN BIAS RESISTOR RATIO IS 1.48
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 60 20 40 60 50
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.6 W 0.6 W 0.6 W 0.6 W 0.6 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
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