Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Silicon PNP epitaxial planer transistor
For digital circuits
s
Features
q
q
Unit: mm
6.9±0.1
1.5
2.5±0.1
1.0
1.0±0.1
R
0.
7
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.4
1.5 R0.9
R0.9
3.5±0.1
1.0
2.4±0.2 2.0±0.2
0.45±0.05
2
1
2.5
0.85
s
Resistance by Part Number
q
q
q
q
q
q
UN1121
UN1122
UN1123
UN1124
UN112X
UN112Y
(R
1
)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
0.27kΩ
3.1kΩ
(R
2
)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
0.55±0.1
3
2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–500
600
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
R1
Internal Connection
1.25±0.05
C
B
R2
E
4.1±0.2
4.5±0.1
1
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
s
Electrical Characteristics
Parameter
Collector cutoff current
UN112X
Collector cutoff current
UN112X
Emitter
cutoff
current
UN1121
UN1122/112X/112Y
UN1123/1124
(Ta=25˚C)
Symbol
I
CBO
I
CBO
I
CEO
I
CEO
I
EBO
V
CBO
Conditions
V
CB
= –50V, I
E
= 0
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
CE
= –50V, I
B
= 0
V
EB
= –6V, I
C
= 0
I
C
= –10µA, I
E
= 0
–50
40
h
FE
V
CE
= –10V, I
C
= –100mA
50
60
20
V
CE(sat)
V
CE(sat)
V
CE(sat)
V
OH
V
OL
f
T
I
C
= –100mA, I
B
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
I
C
= –50mA, I
B
= –5mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 500Ω
V
CC
= –5V, V
B
= –3.5V, R
L
= 500Ω
V
CB
= –10V, I
E
= 50mA, f = 200MHz
200
2.2
4.7
R
1
(–30%)
10
0.27
3.1
0.8
1.0
0.22
0.054
0.67
1.2
(+30%)
kΩ
–4.9
– 0.2
– 0.25
– 0.25
– 0.15
V
V
MHz
V
min
typ
max
–1
– 0.1
–1
– 0.5
–5
–2
–1
V
mA
Unit
µA
µA
Collector to base voltage
Forward
current
transfer
ratio
UN1121
UN1122/112Y
UN1123/1124
UN112X
Collector to emitter saturation voltage
UN112X
UN112Y
Output voltage high level
Output voltage low level
Transition frequency
UN1121
Input
resis-
tance
UN1122
UN1123
UN112X
UN112Y
Resistance ratio
UN1124
UN112X
UN112Y
R
1
/R
2
Common characteristics chart
P
T
— Ta
800
Total power dissipation P
T
(mW)
600
400
200
0
0
40
80
120
160
Ambient temperature Ta (˚C)
2
Transistors with built-in Resistor
Characteristics charts of UN1121
I
C
— V
CE
–240
–100
UN1121/1122/1123/1124/112X/112Y
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
400
h
FE
— I
C
V
CE
= –10V
–200
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–0.01
–1
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
Ta=75˚C
–160
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–120
200
–80
100
25˚C
–40
–0.2mA
–0.1mA
–25˚C
–25˚C
–3
–10
–30
–100 –300 –1000
0
–1
–3
–10
–30
–100 –300 –1000
0
0
–2
–4
–6
–8
–10
–12
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
12
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
V
IN
— I
O
V
O
=–5V
Ta=25˚C
–100
–30
V
O
= –0.2V
Ta=25˚C
–10000
–3000
Collector output capacitance C
ob
(pF)
10
Output current I
O
(
µA
)
8
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
6
4
2
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN1122
I
C
— V
CE
–300
V
CE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
160
V
CE
= –10V
Ta=75˚C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
–250
–30
–10
–3
–1
–0.3
25˚C
–0.1
–0.03
–0.01
–1
–25˚C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
I
B
=–1.0mA
–200
–0.9mA
–0.8mA
–150
–0.7mA
–0.6mA
–0.5mA
–100
–0.4mA
–0.3mA
–50
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
120
25˚C
Ta=75˚C
80
–25˚C
40
–3
–10
–30
–100 –300 –1000
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
3
Transistors with built-in Resistor
C
ob
— V
CB
24
UN1121/1122/1123/1124/112X/112Y
I
O
— V
IN
V
IN
— I
O
V
O
=–5V
Ta=25˚C
–100
–30
V
O
= –0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
20
f=1MHz
I
E
=0
Ta=25˚C
–10000
–3000
Output current I
O
(
µA
)
16
–300
–100
–30
–10
–3
Input voltage V
IN
(V)
–0.6
–0.8
–1.0
–1.2
–1.4
–1000
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
12
8
4
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN1123
I
C
— V
CE
–240
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
–100
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–1
–3
–10
–30
–100 –300 –1000
0
–1
–3
I
C
/I
B
=10
200
V
CE
= –10V
h
FE
— I
C
Ta=75˚C
25˚C
150
–200
–160
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
–120
100
–25˚C
–80
–0.4mA
–0.3mA
50
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
24
–10000
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
V
O
=–5V
Ta=25˚C
V
IN
— I
O
–100
–30
V
O
=–0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
–3000
20
Output current I
O
(
µA
)
16
–300
–100
–30
–10
–3
Input voltage V
IN
(V)
–0.6
–0.8
–1.0
–1.2
–1.4
–1000
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
12
8
4
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
Transistors with built-in Resistor
Characteristics charts of UN1124
I
C
— V
CE
–300
UN1121/1122/1123/1124/112X/112Y
V
CE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
= –10V
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
–250
–30
–10
–3
–1
Ta=75˚C
–0.3
–0.1
–0.03
–0.01
–1
–25˚C
25˚C
Forward current transfer ratio h
FE
350
300
250
Ta=75˚C
200
150
100
50
0
–1
25˚C
–25˚C
Collector current I
C
(mA)
I
B
=–1.0mA
–200
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–100
–0.4mA
–0.3mA
–50
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
–150
–3
–10
–30
–100 –300 –1000
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
24
–10000
f=1MHz
I
E
=0
Ta=25˚C
–3000
I
O
— V
IN
V
O
=–5V
Ta=25˚C
–100
–30
V
IN
— I
O
V
O
= –0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
20
Output current I
O
(
µA
)
16
Input voltage V
IN
(V)
–0.6
–0.8
–1.0
–1.2
–1.4
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
12
8
4
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN112X
I
C
— V
CE
–240
V
CE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
240
V
CE
= –10V
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
–200
–30
–10
–3
–1
–0.3
25˚C
–0.1
–0.03
–0.01
–1
Forward current transfer ratio h
FE
200
Collector current I
C
(mA)
I
B
=–1.6mA
–160
–1.4mA
–1.2mA
–120
–1.0mA
–0.8mA
–80
–0.6mA
–40
–0.4mA
–0.2mA
0
0
–2
–4
–6
–8
–10
–12
160
Ta=75˚C
25˚C
80
–25˚C
40
120
Ta=75˚C
–25˚C
–3
–10
–30
–100 –300 –1000
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
5
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