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30KPA84A

Description
30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size153KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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30KPA84A Overview

30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

30KPA84A Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Base Number Matches1
^£.m.i-dondu(itoi ^Product*., Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
30KPA SERIES
STAND-OFF VOLTAGE-30 TO 288 Volts
30000 Watt Peak Pulse Power
FEATURES
© Plastic package
© Glass passivated junction
© 30000W Peak Pulse Power capability on 10/1000us
waveform
© Excellent clamping capability
© Repetition rate (duty cycle):0.05%
© Low incremental surge resistance
© Fast response time: typically less than 1 .Ops from 0 Volts to BV
©
(9.5mm) lead length, 5lbs., (2.3kg) tension
MECHANICAL DATA
Case:
Molded plastic over glass passivated junction
Terminal:
Plated Axial leads, solderable per MIL-STD-750
Method 2026
Polarity:
Color band denotes positive end (cathode)
except Bipolar
Mounting Position: Any
Wejgnt:
1.0(25.4)
MIN.
0.360 (9.1)
0.340 (8.6)-
DIA.
D.360 (9.1)
0.340 (8.6)
0.052(1.32)
0.048(1.22)
DIA.
1.0 (25.4)
MIN.
Dimensions In Inches andfmllllmeters)
0,07
ounc
e, 2.3gram
DEVICES FOR BIPOLAR APPLICATION
For Bidirectional use C or CA Suffix for types 30KPA30 thru types 30KPA288 (e.g. 30KPA30C , 30KPA288CA)
Electrical characteristics apply in both directions
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
Peak Pulse Power Dissipation on 1 0/1 000
in
s waveform
Peak Pulse Current of on 1 0/1 000
n
s waveform
Steady State Power Dissipation at T
L
= 75°C , Lead lengths.375", (9.5mm)
Peak Forward Surge Current, 1/20 second / 25°C (JEDEC Method)
Operating junction and Storage Temperature Range
SYMBOL
PpPM
VALUE
Minimum
30000
SEE
TABLE 1
8
400
-55 to
+ 175
UNITS
Watts
Amps
Watts
Amps
' PPM
PM(AV)
IFSM
Tj , T
STG
°C
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