SIDACtor Device
SIDACtor
Device
TO-92
SIDACtor
solid state protection devices protect telecommunications equipment such
as modems, line cards, fax machines, and other CPE.
SIDACtor
devices are used to enable equipment to meet various regulatory requirements
including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly
known as FCC Part 68)
.
Electrical Parameters
Part
Number *
P0080E_
P0300E_
P0640E_
P0720E_
P0900E_
P1100E_
P1300E_
P1500E_
P1800E_
P2300E_
P2600E_
P3100E_
P3500E_
V
DRM
Volts
6
25
58
65
75
90
120
140
170
190
220
275
320
V
S
Volts
25
40
77
88
98
130
160
180
220
260
300
350
400
V
T
Volts
4
4
4
4
4
4
4
4
4
4
4
4
4
I
DRM
µAmps
5
5
5
5
5
5
5
5
5
5
5
5
5
I
S
mAmps
800
800
800
800
800
800
800
800
800
800
800
800
800
I
T
Amps
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
I
H
mAmps
50
50
150
150
150
150
150
150
150
150
150
150
150
C
O
pF
100
110
50
50
50
40
40
40
30
30
30
30
30
* For individual “EA”, “EB”, and “EC” surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
• Listed
SIDACtor
devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• V
DRM
is measured at I
DRM.
• V
S
is measured at 100 V/µs.
• Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
• Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias and is a typical value for “EA” and “EB” product. “EC” capacitance
is approximately 2x the listed value. The off-state capacitance of the P0080EB is equal to the “EC” device.
Surge Ratings
I
PP
2x10 µs
Amps
150
250
500
I
PP
8x20 µs
Amps
150
250
400
I
PP
10x160 µs
Amps
90
150
200
I
PP
10x560 µs
Amps
50
100
150
I
PP
10x1000 µs
Amps
45
80
100
I
TSM
60 Hz
Amps
20
30
50
di/dt
Amps/µs
500
500
500
Series
A
B
C
http://www.littelfuse.com
+1 972-580-7777
2 - 16
SIDACtor
®
© 2004 Littelfuse, Inc.
Data Book and Design Guide
SIDACtor Device
Thermal Considerations
Package
TO-92
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +150
-65 to +150
90
Unit
°C
°C
°C/W
+I
+I
I
PP
– Peak Pulse Current – %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
I
T
I
T
I
S
S
I
H
I
DRM
-V
-V
V
T
V
T
V
DRM
V
DRM
V
S
V
S
100
Peak
Value
Waveform = t
r
x t
d
+V
+V
50
Half Value
0
0
t
r
t
d
t – Time (µs)
-I
-I
V-I Characteristics
t
r
x t
d
Pulse Wave-form
14
Percent of V
S
Change – %
10
I
H
(T
C
= 25 ˚C)
12
8
6
4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
I
H
25 ˚C
25 ˚C
Ratio of
Case Temperature (T
C
) – ˚C
Junction Temperature (T
J
) – ˚C
Normalized V
S
Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
© 2004 Littelfuse, Inc.
SIDACtor
®
Data Book and Design Guide
2 - 17
http://www.littelfuse.com
+1 972-580-7777
Data Sheets
Power technology
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