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UN1110

Description
Composite Device - Transistors with built-in Resistor
CategoryDiscrete semiconductor    The transistor   
File Size283KB,14 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

UN1110 Overview

Composite Device - Transistors with built-in Resistor

UN1110 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Transistors with built-in Resistor
UNR111x Series
(UN111x Series)
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits
(0.4)
6.9
±0.1
(1.5)
(1.5)
3.5
±0.1
2.5
±0.1
(1.0)
(1.0)
2.0
±0.2
2.4
±0.2
1.0
±0.1
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
UNR111D
UNR111E
UNR111F
UNR111H
UNR111L
(UN1110)
(UN1111)
(UN1112)
(UN1113)
(UN1114)
(UN1115)
(UN1116)
(UN1117)
(UN1118)
(UN1119)
(UN111D)
(UN111E)
(UN111F)
(UN111H)
(UN111L)
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
3
(2.5)
2
(2.5)
1
1.25
±0.05
Resistance by Part Number
(0.85)
0.55
±0.1
0.45
±0.05
1: Base
2: Collector
3: Emitter
M-A1 Package
Internal Connection
R
1
B
R
2
E
C
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
400
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003
SJH00001BED
4.1
±0.2
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R 0.9
R 0.7
4.5
±0.1
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