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UMZ1N

Description
General purpose transistor (dual transistors)
CategoryDiscrete semiconductor    The transistor   
File Size85KB,5 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

UMZ1N Overview

General purpose transistor (dual transistors)

UMZ1N Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompliant
Maximum collector current (IC)0.15 A
Collector-based maximum capacity3.5 pF
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G6
JESD-609 codee2
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
Maximum power consumption environment0.15 W
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
VCEsat-Max0.4 V
EMZ1 / UMZ1N / IMZ1A
Transistors
General purpose transistor
(dual transistors)
EMZ1 / UMZ1N / IMZ1A
Features
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMZ1
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : Z1
Structure
NPN / PNP epitaxial planar silicon transistor
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
(3)
UMZ1N
0.2
0.5
0.5 0.5
1.0
1.6
(6)
1.25
2.1
0.1Min.
0to0.1
EMZ1 / UMZ1N
(3)
(2)
(1)
IMZ1A
(4)
(5)
(6)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : Z1
Tr
1
Tr
2
Tr
1
Tr
2
IMZ1A
(4)
(5)
(6)
(3)
(2)
(1)
(6)
0.3
(4)
(5)
1.6
2.8
0.15
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
EMZ1, UMZ1N
Power
dissipation IMZ1A
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
Tr
1
60
50
7
150
Tr
2
−60
−50
−6
−150
Unit
V
V
V
mA
mW
˚C
˚C
1
2
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : Z1
150 (TOTAL)
300 (TOTAL)
150
−55
to
+150
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
(3)
(2)
(1)
0.7
0.9
Equivalent circuit
0.15
(1)
2.0
(5)
(2)
Rev.A
1/4

UMZ1N Related Products

UMZ1N EMZ1 IMZ1A
Description General purpose transistor (dual transistors) General purpose transistor (dual transistors) General purpose transistor (dual transistors)
Is it Rohs certified? conform to - conform to
Maker ROHM Semiconductor - ROHM Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G6 - SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code compliant - compli
Maximum collector current (IC) 0.15 A - 0.1 A
Collector-emitter maximum voltage 50 V - 40 V
Configuration SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 120 - 120
JESD-30 code R-PDSO-G6 - R-PDSO-G6
JESD-609 code e2 - e1
Number of components 2 - 2
Number of terminals 6 - 6
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type NPN AND PNP - PNP
surface mount YES - YES
Terminal surface Tin/Copper (Sn/Cu) - Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature 10 - 10
Transistor component materials SILICON - SILICON
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