EMZ1 / UMZ1N / IMZ1A
Transistors
General purpose transistor
(dual transistors)
EMZ1 / UMZ1N / IMZ1A
Features
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMZ1
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : Z1
Structure
NPN / PNP epitaxial planar silicon transistor
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
(3)
UMZ1N
0.2
0.5
0.5 0.5
1.0
1.6
(6)
1.25
2.1
0.1Min.
0to0.1
EMZ1 / UMZ1N
(3)
(2)
(1)
IMZ1A
(4)
(5)
(6)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : Z1
Tr
1
Tr
2
Tr
1
Tr
2
IMZ1A
(4)
(5)
(6)
(3)
(2)
(1)
(6)
0.3
(4)
(5)
1.6
2.8
0.15
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
EMZ1, UMZ1N
Power
dissipation IMZ1A
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
Tr
1
60
50
7
150
Tr
2
−60
−50
−6
−150
Unit
V
V
V
mA
mW
˚C
˚C
∗
1
∗
2
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : Z1
150 (TOTAL)
300 (TOTAL)
150
−55
to
+150
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
(3)
(2)
(1)
0.7
0.9
Equivalent circuit
0.15
(1)
2.0
(5)
(2)
Rev.A
1/4
EMZ1 / UMZ1N / IMZ1A
Transistors
Electrical characteristics
(Ta = 25°C)
Tr
1
(NPN)
Parameter
Symbol Min. Typ. Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
60
50
7
−
−
−
120
−
−
−
−
−
−
−
−
−
−
0.1
0.1
0.4
560
V
V
V
µA
µA
V
−
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=60V
V
EB
=7V
I
C
/I
B
=50mA/5mA
V
CE
=6V,
I
C
=1mA
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
f
T
Cob
−
−
180
2
−
3.5
MHz V
CE
=12V,
I
E
=−2mA,
f=100MHz
PF
V
CB
=12V,
I
E
=0A,
f=1MHz
Tr
2
(PNP)
Parameter
Symbol Min. Typ. Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
−60
−50
−6
−
−
−
120
−
−
−
−
−
−
−
−
−
−
−0.1
−0.1
−0.5
560
V
V
V
µA
µA
V
−
I
C
=
−50µA
I
C
=
−1mA
I
E
=
−50µA
V
CB
=
−60V
V
EB
=
−
6V
I
C
/I
B
=
−50mA/−5mA
V
CE
=
−6V,
I
C
=
−1mA
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
f
T
Cob
−
−
140
4
−
5
MHz V
CE
=
−12V,
I
E
=2mA,
f=100MHz
PF
V
CB
=
−12V,
I
E
=0A,
f=1MHz
Packaging specifications
Package
Code
T2R
8000
Taping
TR
3000
T108
3000
Type
EMZ1
UMZ1N
IMZ1A
Basic ordering
unit (pieces)
Electrical characteristic curves
Tr
1
(NPN)
50
V
CE
=6V
100
Ta=25˚C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
20
10
5
80
0.50mA
mA
0.45
A
.40m
0
0.35mA
0.30mA
0.25mA
10
Ta=25˚C
30µA
27µA
8
24µA
21µA
Ta=100˚C
25˚C
−5
5˚C
60
0.20mA
0.15mA
6
18µA
15µA
2
1
0.5
0.2
0.1
0
0.2
40
0.10mA
4
12µA
9µA
20
0.05mA
2
6µA
3µA
I
B
=0A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0
0.4
0.8
1.2
1.6
2.0
0
0
I
B
=0A
4
8
12
16
20
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics ( I )
Fig.3 Grounded emitter output
characteristics ( II )
Rev.A
2/4
EMZ1 / UMZ1N / IMZ1A
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
500
500
Ta=25˚C
DC CURRENT GAIN : h
FE
Ta=100˚C
V
CE
=5V
3V
1V
200
V
CE
=5V
0.5
Ta=25˚C
DC CURRENT GAIN : h
FE
200
25˚C
−55˚C
0.2
100
100
0.1
0.05
I
C
/I
B
=50
20
10
50
50
0.02
20
20
10
0.2
0.5
1
2
5
10 20
50 100 200
10
0.2
0.5
1
2
5
10 20
50 100 200
0.01
0.2
0.5
1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4
DC current gain vs. collector
current ( I )
Fig.5
DC current gain vs. collector
current ( II )
Fig.6 Collector-emitter saturation
voltage vs. collector current ( I )
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
0.5
I
C
/I
B
=10
0.5
I
C
/I
B
=50
TRANSITION FREQUENCY : f
T
(MHz)
500
Ta=25˚C
V
CE
=6V
0.2
0.2
0.1
0.05
0.1
0.05
Ta=100˚C
25˚C
−55˚C
Ta=100˚C
25˚C
−55˚C
200
0.02
100
0.02
0.01
0.2
0.5
1
2
5
10
20
50 100
0.01
0.2
0.5
1
2
5
10
20
50 100 200
50
−0.5
−1
−2
−5
−10
−20
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( II )
Fig.8 Collector-emitter saturation
voltage vs. collector current ( III )
Fig.9 Gain bandwidth product vs.
emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
BASE COLLECTOR TIME CONSTANT : Cc r
bb'
(ps)
20
10
Cib
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
200
Ta=25˚C
f=32MH
Z
V
CB
=6V
100
5
50
2
Co
20
b
1
0.2
0.5
1
2
5
10
20
50
10
−0.2
−0.5
−1
−2
−5
−10
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
EMITTER CURRENT : I
E
(mA)
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Fig.11 Base-collector time constant vs.
emitter current
Rev.A
3/4
EMZ1 / UMZ1N / IMZ1A
Transistors
Tr
2
(PNP)
−50
COLLECTOR CURRENT : Ic
(mA)
COLLECTOR CURRENT : I
C
(mA)
−10
−5
−2
−1
−0.5
−0.2
−0.1
−8
−28.0
−24.5
COLLECTOR CURRENT : I
C
(mA)
−20
Ta=100˚C
25˚C
−
40˚C
V
CE
=
−
6V
−10
−35.0
Ta=25˚C
−31.5
−100
Ta=25˚C
−500
−450
−400
−350
−300
−80
−6
−21.0
−17.5
−60
−250
−200
−4
−14.0
−10.5
−40
−150
−100
−2
−7.0
−3.5µA
I
B
=0
−20
−50µA
I
B
=0
0
−1
−2
−3
−4
−5
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
0
−0.4
−0.8
−1.2
−1.6
−2.0
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.12 Grounded emitter propagation
characteristics
Fig.13 Grounded emitter output
characteristics ( I )
Fig.14 Grounded emitter output
characteristics ( II )
Ta=25˚C
DC CURRENT GAIN : h
FE
V
CE
=−5V
−3V
−1V
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(
V)
500
500
−1
Ta=100˚C
25˚C
200
Ta=25˚C
DC CURRENT GAIN : h
FE
−0.5
200
−40˚C
−0.2
100
100
I
C
/I
B
=50
−0.1
20
10
50
50
−0.05
−0.2
−0.5 −1
−2
−5
−10 −20
−50 −100
V
CE
=−6V
−0.2
−0.5 −1
−2
−5
−10 −20
−50 −100
−0.2
−0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.15 DC current gain vs. collector
current ( I )
Fig.16 DC current gain vs. collector
current ( II )
Fig.17 Collector-emitter saturation
voltage vs. collector current ( I )
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
−1
l
C
/l
B
=10
1000
20
−0.5
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25˚C
V
CE
=−12V
Cib
10
500
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
Co
b
−0.2
200
5
−0.1
Ta=100˚C
25˚C
−40˚C
100
2
−0.05
50
0.5
1
2
5
10
−0.2
−0.5 −1
−2
−5
−10 −20
−50 −100
20
50
100
-0.5
-1
-2
-5
-10
-20
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.18 Collector-emitter saturation
voltage vs. collector current ( II )
Fig.19 Gain bandwidth product vs.
emitter current
Fig.20 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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