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PSMN075-100MSE_15

Description
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications
File Size355KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PSMN075-100MSE_15 Overview

N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications

LF
PSMN075-100MSE
26 March 2013
PA
K
33
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33
designed specifically for PoE applications
Product data sheet
1. General description
New standards and proprietary approaches are enabling the next generation of Power-
over-Ethernet (PoE) systems capable of delivering up to 100W to each powered
device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom
CCTV cameras, for example, are placing increased demands on the power sourcing
equipment (PSE) in terms of “soft-start” procedures, resilience to short-circuits, thermal
management and power density. Part of NXP’s “NextPower Live” MOSFET portfolio,
the PSMN075-100MSE has been designed specifically to compliment the latest PoE
controllers, offering both superior linear mode operation and very low R
DS(on)
in a cost-
effective, industry compatible, LFPAK33 package.
2. Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package – no glue, no wires, 175°C
Very low I
DSS
3. Applications
IEEE802.3at and proprietary solutions - (type 2)
Suitable for PoE applications upto 30W
Use PSMN040-100MSE for higher power requirements
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
j
= 25 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 12
Min
-
-
-
Typ
-
-
-
Max
100
18
65
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
57
71
Dynamic characteristics
Q
GD
V
GS
= 10 V; I
D
= 5 A; V
DS
= 50 V;
T
j
25 °C;
Fig. 14; Fig. 15
-
5.3
-
nC
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