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UMR12N

Description
0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size183KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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UMR12N Overview

0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE

UMR12N Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-88
package instructionUMD6, SC-88, 6 PIN
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Configuration2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G6
JESD-609 codee2
Humidity sensitivity level1
Number of components4
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.1 µA
Reverse test voltage80 V
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
DA221
Diodes
Switching diode
DA221
Applications
Ultra high speed switching
External dimensions
(Unit : mm)
Land size figure
(Unit : mm)
1.0
0.5 0.5
0.3±0.1
    0.05
(3)
0.15±0.05
0.8±0.1
1.6±0.2
Features
1) Ultra small mold type. (EMD3)
2) High reliability.
0.7
1.6±0.2
0.7
0.7
0½0.1
0.1Min
0.6
EMD3
0.6
Construction
Silicon epitaxial planar
0.2±0.1
  -0.05
(2)
0.5
0.5
1.0±0.1
(1)
0.55±0.1
0.7±0.1
Structure
(1)D2:C (2)D1:A
(3)D1:C D2:A
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
      0
1.75±0.1
0.3±0.1
3.5±0.05
1.8±0.2
5.5±0.2
1.8±0.1
φ0.5±0.1
0½0.1
8.0±0.2
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Average rectified forward current (Single)
Surge current
(t=1us)
Power dissipation
Junction temperature
Storage temperature
Rarted in slash put frequency
Symbol
V
RM
V
R
I
FM
Io
I
surge
Pd
Tj
Tstg
½
Limits
20
20
200
100
300
150
150
-55 to +150
100
Unit
V
V
mA
mA
mA
mW
MH½
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V
F
I
R
Ct
Min.
-
-
-
Typ.
-
-
-
Max.
1.0
0.1
4.0
Unit
V
µA
pF
Conditions
I
F
=10mA
V
R
=15V
V
R
=6V , f=1MHz
Rev.A
1.3
0.9±0.2
1/3

UMR12N Related Products

UMR12N DA204K DA204U DA221 DA228K DA221M DA228U
Description 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 20 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 20 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 20 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 20 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
package instruction UMD6, SC-88, 6 PIN R-PDSO-G3 UMD3, SC-70, 3 PIN R-PDSO-G3 SMD3, SC-59, 3 PIN R-PDSO-F3 ULTRA SMALL, UMD3, SC-70, 3 PIN
Contacts 6 3 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1 V 1 V 1 V 1.2 V 1 V 1.2 V
JESD-30 code R-PDSO-G6 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-F3 R-PDSO-G3
JESD-609 code e2 e1 e1 e1 e1 e2 e1
Humidity sensitivity level 1 1 1 1 1 1 1
Number of components 4 2 2 2 2 2 2
Number of terminals 6 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260
Maximum power dissipation 0.2 W 0.2 W 0.2 W 0.15 W 0.2 W 0.15 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 80 V 20 V 20 V 20 V 80 V 20 V 80 V
surface mount YES YES YES YES YES YES YES
Terminal surface Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING FLAT GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10 10 10 10
Parts packaging code SC-88 SC-59 SC-70 SC-75A SC-59 - SC-70
Maker - ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor
Other features - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Maximum non-repetitive peak forward current - 0.3 A - 0.3 A 0.3 A 0.3 A 0.3 A
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