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UMP1N

Description
0.025 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size61KB,1 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

UMP1N Overview

0.025 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE

UMP1N Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-88A
package instructionR-PDSO-G5
Contacts5
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationCOMMON ANODE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-30 codeR-PDSO-G5
JESD-609 codee2
Humidity sensitivity level1
Number of components4
Number of terminals5
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.025 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage70 V
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
F
EATURES
1N3070-1
1N3070-1
AVAILABLE IN
JAN, JANTX, AND JANTXV
PER MIL-PRF-
D
IODE
M
ETALLURGICALLY
B
ONDED
H
ERMETICALLY
S
EALED
D
OUBLE
P
LUG
C
ONSTRUCTION
19500/169
S
WITCHING
M
AXIMUM
R
ATINGS AT
25
°C
Operating Temperature:
Storage Temperature:
Surge Current A, sine, 1uS:
Surge Current B, sine, 1S:
Total Power Dissipation:
Operating Current:
-65°C to +175°C
-65°C to +175°C
2.0A
0.5A
500mW
100mA, T
A
= +25°C
Derating Factor:
D.C. Reverse Voltage (VRWM):
0.667mA/°C above T
A
= +25°C
175V
DC E
LECTRICAL
C
HARACTERISTICS
V
F
Ambient
(°C)
I
F
mA
Min Max Ambient
V
V
(°C)
I
R
V (dc)
Min Max Ambient
µA
µA
(°C)
V
BR
I
R
µA
Min Max
V
V
25
-55
100
100
-
-
1.0
1.2
25
150
175
175
-
-
0.1
100
25
100
200
-
D
ESIGN
D
ATA
Case:
Hermetically sealed glass package per MIL-
PRF-19500/169 DO-7 outline
Lead Material:
Copper clad steel
Lead Finish:
Tin/Lead
Thermal Resistance (R
θJL
):
250°C/W maximum
at L=.375”
Thermal Impedance (Z
θJX
):
70°C/W maximum
Marking:
Alpha numeric.
Polarity:
Cathode end is banded.
AC E
LECTRICAL
C
HARACTERISTICS AT
25°C
Symbol
Capacitance
@ 0V
T
RR
@ I
F
=I
R
=30mA,
I
Rec
= 3mA.
pF
nsec
Min
-
-
Max
5
50
I
RELAND -
G
ORT
R
OAD
,
E
NNIS,
C
O.
C
LARE
PHONE:
TOLL FREE:
FAX:
+353 65 6840044
+186 62 702434
+353 65 6822298
WWW.MICROSEMI.COM
U.S.A. D
OMESTIC
S
ALES
C
ONTACT
PHONE:
TOLL FREE:
(617) 926 0404
1 800 666 2999

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Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Parts packaging code SC-88A SC-88 SC-88A SC-88 SC-74 SC-74
package instruction R-PDSO-G5 UMD6, SC-88, 6 PIN UMD5, SC-88A, 5 PIN R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
Contacts 5 6 5 6 6 6
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH SPEED SWITCH HIGH SPEED SWITCH HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Configuration COMMON ANODE, 4 ELEMENTS 2 BANKS, COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 4 ELEMENTS 2 BANKS, COMMON CATHODE, 2 ELEMENTS 2 BANKS, COMMON CATHODE, 2 ELEMENTS 2 BANKS, COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.9 V 1.2 V 0.9 V 1.2 V 1.2 V 1.2 V
JESD-30 code R-PDSO-G5 R-PDSO-G6 R-PDSO-G5 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
JESD-609 code e2 e2 e2 e2 e1 e1
Humidity sensitivity level 1 1 1 1 1 1
Number of components 4 4 4 4 4 4
Number of terminals 5 6 5 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 0.025 A 0.1 A 0.025 A 0.1 A 0.1 A 0.1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Maximum power dissipation 0.15 W 0.15 W 0.15 W 0.15 W 0.3 W 0.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 80 V 80 V 80 V 80 V 80 V 80 V
Maximum reverse recovery time 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs
surface mount YES YES YES YES YES YES
Terminal surface Tin/Copper (Sn/Cu) Tin/Copper (Sn/Cu) Tin/Copper (Sn/Cu) Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10 10 10
Maker ROHM Semiconductor - - ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor
Minimum operating temperature -55 °C -55 °C - -55 °C -55 °C -55 °C
Maximum reverse current 0.1 µA 0.1 µA - 0.1 µA 0.1 µA 0.1 µA
Reverse test voltage 70 V 70 V - 70 V 70 V 70 V
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