UMN11N datasheet, PDF - EEWORLD Datasheet

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UMN11N: Description0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size61KB，1 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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UMN11N Overview

0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE

UMN11N Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
Parts packaging code	SC-88
package instruction	R-PDSO-G6
Contacts	6
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	2 BANKS, COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	R-PDSO-G6
JESD-609 code	e2
Humidity sensitivity level	1
Number of components	4
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.15 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	80 V
Maximum reverse current	0.1 µA
Maximum reverse recovery time	0.004 µs
Reverse test voltage	70 V
surface mount	YES
Terminal surface	Tin/Copper (Sn/Cu)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10

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EATURES

1N3070-1

•

1N3070-1

AVAILABLE IN

JAN, JANTX, AND JANTXV

PER MIL-PRF-

•

IODE

•

ETALLURGICALLY

ONDED

•

ERMETICALLY

EALED

•

OUBLE

LUG

ONSTRUCTION

19500/169

WITCHING

AXIMUM

ATINGS AT

°C

Operating Temperature:

Storage Temperature:

Surge Current A, sine, 1uS:

Surge Current B, sine, 1S:

Total Power Dissipation:

Operating Current:

-65°C to +175°C

2.0A

0.5A

500mW

100mA, T

= +25°C

Derating Factor:

D.C. Reverse Voltage (VRWM):

0.667mA/°C above T

= +25°C

175V

DC E

LECTRICAL

HARACTERISTICS

Ambient

(°C)

Min Max Ambient

(°C)

V (dc)

Min Max Ambient

µA

(°C)

µA

Min Max

-55

100

1.0

1.2

150

175

0.1

100

200

ESIGN

ATA

Case:

Hermetically sealed glass package per MIL-

PRF-19500/169 DO-7 outline

Lead Material:

Copper clad steel

Lead Finish:

Tin/Lead

Thermal Resistance (R

θJL

250°C/W maximum

at L=.375”

Thermal Impedance (Z

θJX

70°C/W maximum

Marking:

Alpha numeric.

Polarity:

Cathode end is banded.

AC E

LECTRICAL

HARACTERISTICS AT

25°C

Symbol

Capacitance

@ 0V

@ I

=30mA,

Rec

= 3mA.

nsec

Min

Max

RELAND -

ORT

OAD

NNIS,

LARE

PHONE:

TOLL FREE:

FAX:

+353 65 6840044

+186 62 702434

+353 65 6822298

WWW.MICROSEMI.COM

U.S.A. D

OMESTIC

ALES

ONTACT

PHONE:

TOLL FREE:

(617) 926 0404

1 800 666 2999

UMN11N Related Products

	UMN11N	UMP1N	UMP11N	UMN1N	IMN11	IMP11
Description	0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE	0.025 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE	0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE	0.025 A, 4 ELEMENT, SILICON, SIGNAL DIODE	0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE	0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	SC-88	SC-88A	SC-88	SC-88A	SC-74	SC-74
package instruction	R-PDSO-G6	R-PDSO-G5	UMD6, SC-88, 6 PIN	UMD5, SC-88A, 5 PIN	R-PDSO-G6	R-PDSO-G6
Contacts	6	5	6	5	6	6
Reach Compliance Code	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH SPEED SWITCH	HIGH SPEED SWITCH	HIGH RELIABILITY	HIGH RELIABILITY
Configuration	2 BANKS, COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 4 ELEMENTS	2 BANKS, COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 4 ELEMENTS	2 BANKS, COMMON CATHODE, 2 ELEMENTS	2 BANKS, COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	0.9 V	1.2 V	0.9 V	1.2 V	1.2 V
JESD-30 code	R-PDSO-G6	R-PDSO-G5	R-PDSO-G6	R-PDSO-G5	R-PDSO-G6	R-PDSO-G6
JESD-609 code	e2	e2	e2	e2	e1	e1
Humidity sensitivity level	1	1	1	1	1	1
Number of components	4	4	4	4	4	4
Number of terminals	6	5	6	5	6	6
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	0.1 A	0.025 A	0.1 A	0.025 A	0.1 A	0.1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Maximum power dissipation	0.15 W	0.15 W	0.15 W	0.15 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	80 V	80 V	80 V	80 V	80 V	80 V
Maximum reverse recovery time	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	Tin/Copper (Sn/Cu)	Tin/Copper (Sn/Cu)	Tin/Copper (Sn/Cu)	Tin/Copper (Sn/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10	10	10	10
Maker	ROHM Semiconductor	ROHM Semiconductor	-	-	ROHM Semiconductor	ROHM Semiconductor
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C
Maximum reverse current	0.1 µA	0.1 µA	0.1 µA	-	0.1 µA	0.1 µA
Reverse test voltage	70 V	70 V	70 V	-	70 V	70 V

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