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2SC3162-4000

Description
Power Bipolar Transistor, 3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size36KB,1 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric Compare View All

2SC3162-4000 Overview

Power Bipolar Transistor, 3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

2SC3162-4000 Parametric

Parameter NameAttribute value
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)3 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment45 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Maximum off time (toff)1100 ns
Maximum opening time (tons)300 ns
VCEsat-Max1 V
Base Number Matches1

2SC3162-4000 Related Products

2SC3162-4000 2SC3163-4000 2SC3164-4000 2SC4080-4000 2SC4082-4000 2SC4081-4000
Description Power Bipolar Transistor, 3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MTO-3P, 3 PIN Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-3P, 3 PIN Power Bipolar Transistor, 15A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-3P, 3 PIN Power Bipolar Transistor, 10A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-3P, 3 PIN
Parts packaging code SFM SFM TO-3P TO-3P TO-3P TO-3P
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
Maximum collector current (IC) 3 A 6 A 10 A 8 A 15 A 10 A
Collector-emitter maximum voltage 400 V 400 V 400 V 450 V 450 V 450 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 10 10 10 10 10
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power consumption environment 45 W 50 W 100 W 50 W 75 W 65 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz
Maximum off time (toff) 1100 ns 1100 ns 1100 ns 2200 ns 2200 ns 2200 ns
Maximum opening time (tons) 300 ns 300 ns 300 ns 500 ns 500 ns 500 ns
VCEsat-Max 1 V 1 V 1 V 1 V 1 V 1 V
Base Number Matches 1 1 1 1 1 1

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