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2N5116G-2

Description
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA
CategoryDiscrete semiconductor    The transistor   
File Size59KB,2 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

2N5116G-2 Overview

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA

2N5116G-2 Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknow
Shell connectionGATE
ConfigurationSINGLE
Maximum drain-source on-resistance150 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)7 pF
JEDEC-95 codeTO-206AA
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2N5116G-2 Related Products

2N5116G-2 2N5114G-2 2N5115G-2 2N5115G-1 2N5116G-1 2N5116G 2N5114G-1 2N5114G 2N5115G
Description Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow
Shell connection GATE GATE GATE GATE GATE GATE GATE GATE GATE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum drain-source on-resistance 150 Ω 75 Ω 100 Ω 100 Ω 150 Ω 150 Ω 75 Ω 75 Ω 100 Ω
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 7 pF 7 pF 7 pF 7 pF 7 pF 7 pF 7 pF 7 pF 7 pF
JEDEC-95 code TO-206AA TO-206AA TO-206AA TO-206AA TO-206AA TO-206AA TO-206AA TO-206AA TO-206AA
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1 1 1
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