BGSX
G A
BGSX
Features
G A
D P DT A n te n n a C ro s s S w i tc h
•
RF CMOS DPDT antenna cross switch with power handling capability of
up to dBm
•
Suitable for multi-mode LTE and WCDMA multi antenna applications
•
Ultra-low insertion loss and harmonics generation
•
. to . GHz coverage
•
High port-to-port-isolation
•
No decoupling capacitors required if no DC applied on RF lines
•
General Purpose Input-Output (GPIO) Interface
•
Small form factor . mm x . mm
•
No power supply blocking required
•
High EMI robustness
•
RoHS and WEEE compliant package
. x . mm
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC /
/ .
Block diagram
RF1
RF2
RF3
RF4
DPDT
VDD
GND
GPIO
Controller
CTRL
Data Sheet
www.infineon.com
Revision .
- -
BGSX
G A
DPDT Antenna Cross Switch
Table of Contents
Table of Contents
Table of Contents
Features
Maximum Ratings
Operation Ranges
RF Characteristics
Modes of Operation
Application Information
Package Information
Data Sheet
Revision .
- -
BGSX
Features
G A
DPDT Antenna Cross Switch
Features
•
RF CMOS DPDT antenna cross switch with power handling capability of
up to dBm
•
Suitable for multi-mode LTE and WCDMA multi antenna applications
•
Ultra-low insertion loss and harmonics generation
•
. to . GHz coverage
•
High port-to-port-isolation
•
No decoupling capacitors required if no DC applied on RF lines
•
General Purpose Input-Output (GPIO) Interface
•
Small form factor . mm x . mm
•
No power supply blocking required
•
High EMI robustness
•
RoHS and WEEE compliant package
Description
The BGSX G A RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications. This DPDT o ers low
insertion loss and low harmonic generation paired with high isolation between RF ports.
The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from . V to . V.
The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking
capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX G A RF Switch is manufactured in
Infineon’s patented MOS technology, o ering the performance of GaAs with the economy and integration of conventional
CMOS including the inherent higher ESD robustness. The device has a very small size of only . x . mm and a maximum
thickness of . mm.
Product Name
BGSX G A
Marking
X
Package
ATSLP- -
Data Sheet
Revision .
- -
BGSX
G A
DPDT Antenna Cross Switch
Maximum Ratings
Maximum Ratings
Table : Maximum Ratings Table
at T
A
=
Parameter
Frequency Range
Supply voltage
)
◦
C, unless otherwise specified
Values
Min.
Typ.
–
–
–
–
–
–
–
–
–
–
- .
–
+
+
+
Max.
.
.
GHz
V
◦
◦
)
Symbol
f
V
DD
T
STG
T
j
P
RF
V
ESD_CDM
V
ESD_HBM
)
Unit
Note / Test Condition
.
- .
-
–
–
-
-
-
–
–
–
–
CW / VSWR : /
Storage temperature range
Junction temperature
RF input power at all RF ports
ESD capability, CDM
ESD capability, HBM
)
)
C
C
dBm
kV
kV
kV
K/W
V
ESD capability, system level
V
ESD_RF
R
thJS
V
RFDC
RF versus system GND, with
nH
–
No DC voltages allowed on RF-
Ports
–
Thermal resistance junction -
soldering point
Maximum DC-voltage on RF-
Ports and RF-Ground
GPIO control voltage levels
V
Ctrlx
V
DD
+ .
(max.
. V)
V
For higher frequencies, losses have to be considered for their impact on thermal heating. The DC voltage at RF ports
VRFDC has to be V.
)
Note: Consider potential ripple voltages on top of
V
. Including RF ripple,
V
DD
DD
must not exceed the maximum ratings:
V
DD
=
V
DC
+
V
Ripple
. Furthermore,
high pulse voltages at
V
DD
pin will cause the ESD structure to trigger.
)
Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-
. Simulates charging/discharging events that occur in production equipment and
processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
)
Human Body Model ANSI/ESDA/JEDEC JS-
(R= , k , C=
pF).
)
IEC
- - (R=
, C=
pF), contact discharge.
)
Switch has a lowpass response.
Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Expo-
sure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may
a ect device reliability and life time. Functionality of the device might not be given under these conditions.
Data Sheet
Revision .
- -
BGSX
G A
DPDT Antenna Cross Switch
Operation Ranges
Operation Ranges
Table : Operation Ranges
at T
A
= −
Parameter
Supply voltage
Supply current
GPIO control voltage high
◦
C...
◦
C, P
IN
= dBm, Supply Voltage V
DD
= .
Values
Min.
Typ.
–
–
–
V
DD
+ .
(max.
. V)
V
Max.
.
V
A
.
–
.
V ... . V, unless otherwise specified
Note / Test Condition
–
–
–
Symbol
V
DD
I
DD
V
Ctrl_H
Unit
GPIO control voltage low
GPIO control input capacitance
Ambient temperature
V
Ctrl_L
C
Ctrl
T
A
- .
–
-
–
–
.
V
pF
◦
–
–
–
C
Table : RF Input Power
Parameter
RF input power
Symbol
Min.
P
RF
–
Values
Typ.
–
Max.
dBm
CW / VSWR : /
Unit
Note / Test Condition
Data Sheet
Revision .
- -
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