BSM10GD100D datasheet, PDF - EEWORLD Datasheet

BSM10GD100D: DescriptionInsulated Gate Bipolar Transistor, 10A I(C), 1000V V(BR)CES; CategoryDiscrete semiconductor The transistor; File Size309KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSM10GD100D Overview

Insulated Gate Bipolar Transistor, 10A I(C), 1000V V(BR)CES

Parameter Name	Attribute value
Maker	Infineon
package instruction	,
Reach Compliance Code	compliant
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	1000 V
Number of components	1
Maximum power dissipation(Abs)	50 W
VCEsat-Max	2.8 V

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